Electrical, Morphological, and Compositional Characterization of Screen-Printed Al Contacts Annealed in Horizontal and Vertical Configurations

Ahmad, Samir; Leong, Cheow Siu; Winder, Richard W.; Sopian, Kamaruzzaman; Zaidi, Saleem H.

doi:10.1007/s11664-019-07409-x

Cited by 4 publications

(3 citation statements)

References 25 publications

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“…The temperature T1(t) of the metallization track was calculated from switching oscillograms U(t) taken from an area of the test structure in the course of current pulse passage using Equation (1). Here R0 = 0.88 Ω is the resistance of metallization track at T0 = 290 K measured by the voltmeter-ammeter method; the area length ℓ = 2.9 mm; Al film thickness h1 = 2.1 µm; track width b = 75 µm; α = 0.0043 К -1 is the Al temperature coefficient of resistance.…”

Section: Methodsmentioning

confidence: 99%

“…The most important of them are as follows: tendency to electromigration, possibility of short circuit through dielectric in layered metallization systems (because of formation of spurs on a film due to electromigration and Al recrystallization), high diffusion mobility of А1 over the grain boundaries, low melting point (577°С) of the eutectic of Al-Si system, low mechanical strength of Al films, impossibility of wire attachment using soldering, etc. (Gupta, 1979;Ahmad et al, 2019). Because of the listed disadvantages, multilayer systems with metal sublayers (including Аl) are applied in ICs and transistors with shallow p-n junctions to get the basic current-carrying layer.…”

Section: Introductionmentioning

confidence: 99%

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Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Скворцов¹,

Koryachko²,

Zuev³

et al. 2020

PTQ

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In recent years, much attention of developers of integrated microcircuits is given to designing novel types of microprocessors, development, and mastery of technologies of both multilayer 3D integrated circuits and making devices based on complex semiconductors. The aim of the present work is to study thermal processes in the Al-Ti-Si multilayer system up to the development of degradation processes. The degradation issues in aluminum metallization with titanium sublayer deposited onto silicon surface are considered. The evolution of processes of irreversible destruction of film conductor under passage through it of single square-wave current pulses with energy up to 300 mJ and duration of 50…1000 μs was analyzed. It was found that, under the action of a single square-wave current pulse with a duration of no more than 80 μs and energy of 85 mJ, the priority process of structural damage is the melting of the metal film. Increasing pulse duration (τ > 80 μs) changes the priority of thermal degradation, and contact melting becomes the main mechanism of structure damage. It was also found that isothermal annealing leads to improving system heat-conducting properties and increasing critical current densities. This is related to the improvement of adhesion properties of the structure as well as with phase transformations in the Al-Ti-Si system in the course of annealing. The results of the article can be used in further studies of the properties of the AI-TI-SI system, as well as in the creation of semiconductor structures taking into account properties such as high electrical conductivity, good processability, the absence of chemical components in the Al-Si system, chemical stability, and a tendency to electromigration, the possibility of short circuit, high diffusion mobility, low melting point, the inability to attach the wire by soldering.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Скворцов¹,

Koryachko²,

Zuev³

et al. 2020

PTQ

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“…Today, the main focus of integrated circuit developers is focused on creating new types of microprocessors and integrated circuits, as well as on the development of manufacturing technologies for semiconductor devices based on complex semiconductor materials [1][2]. Since the main reason for the failure of such devices is still the metallization system and contacts, research on the creation of multi-level systems is key [3][4]. One of the disadvantages of using aluminum metallization is the tendency to electromigration, high diffusion mobility along grain boundaries, insufficient mechanical strength of Al films, and restrictions on connecting leads using soldering [5][6].…”

Section: Introductionmentioning

confidence: 99%

Dynamics of thermal destruction of Al-(Ti,SiO2)-Si structures under pulsed action

Koryachko,

Varlamov,

Skvortsov

et al. 2024

Third International Conference on Optics, Computer Applications, and Materials Science (CMSD-III 2023)

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The work carried out an experimental study of the features of thermal destruction of Al-Ti-Si, Al-SiO2-Si and Al-Si systems under pulsed current exposure. The dynamics of heating systems at current densities j>3•10 10 A/m 2 and durations up to 500 µs are presented. The initial stages of melting processes in thin-film systems and the mechanisms of destruction of structures during the passage of a single rectangular current pulse have been identified. Thus, the presence of a Ti sublayer increases the thermal stability of a multilayer system; the main mechanisms of destruction of structures are associated with the phenomenon of electrical transfer, as well as the migration of molten zones in the temperature gradient field after turning off the pulse near a local heat source. The presence of a dielectric sublayer of SiO2 leads to increased thermal loads on the metallization system (at j=3.10 10 A/m 2 and pulse duration up to 450 µs) compared to the Al-Si structure.

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Metallization in Solar Cell

Zaidi

2021

Crystalline Silicon Solar Cells

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Electrical, Morphological, and Compositional Characterization of Screen-Printed Al Contacts Annealed in Horizontal and Vertical Configurations

Cited by 4 publications

References 25 publications

Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Dynamics of thermal destruction of Al-(Ti,SiO2)-Si structures under pulsed action

Metallization in Solar Cell

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