Electrical, optical and structural characteristics of gallium oxide thin films deposited by RF-sputtering

Juárez-Amador, L. I.; Galván-Arellano, M.; Andraca-Adame, J. A.; Romero-Paredes, G.; Kennedy-Magos, A.; Peña‐Sierra, R.

doi:10.1007/s10854-018-9200-3

Cited by 4 publications

(2 citation statements)

References 17 publications

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“…Beta-gallium oxide (Ga 2 O 3 ) is an ultra-wide band gap (UWBG) semiconductor with a highly distinctive property set compared to other classical correlated oxides such as SrTiO3 [7][8], In2O3 [9][10], CdO [11], or ZnO [12]. The uniqueness of UWBG Ga 2 O 3 lies in the combination of an intrinsically wide large electrical breakdown field [13,14], ability to be efficiently donor doped [15][16], possibility to obtain low resistivity also in amorphous and nano-crystalline states [17][18][19][20], a high temperature p-type conductivity withought doping [21] and 6-inch crystal low cost fabrication possibility [22] .These features have been key in promoting Ga 2 O 3 to the forefront in the quest for the next generation of UVC photodetectors, solar transparent conducting electrodes and high power/speed energy converters/switches.…”

Section: Introductionmentioning

confidence: 99%

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

Chikoidze

Rogers²,

Téherani³

et al. 2019

Materials Today Physics

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Here we report the analogous of an extremely stable topological-like ultra-wide bandgap insulator, (a solid that is a pure insulator in its bulk but has a metallic conductive surface), presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. Nominally undoped epitaxial β-Ga 2 O 3 thin-films without any detectable defect (after a range of state-of-the-art techniques) showed the unexpectedly low resistivity of (3×10 -2 Ωcm) which was found to be also resistant to high dose proton irradiation (2MeV, 5x10 15 cm -2 dose) and was largely invariant (metallic) over the phenomenal temperature range of 2K up to 850K. The unique resilience and stability of the electrical properties under thermal and highly ionising radiation stressing, combined with the extended transparency range (thanks to the ultra-wide bandgap) and the already known toughness under high electrical field could open up new perspectives for use as expanded spectral range transparent electrodes (e.g. for UV harvesting solar cells or UV LEDs/lasers) as well as robust Ohmic contacts for use in extreme environments/applications and for novel optoelectronic and power device concepts.

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Section: Introductionmentioning

confidence: 99%

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

Chikoidze

Rogers²,

Téherani³

et al. 2019

Materials Today Physics

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“…The literatures carry reports on low temperature grown b-Ga 2 O 3 NSs via various techniques. b-Ga 2 O 3 nanoparticles and nanowires have been fabricated using DC arc thermal plasma, 22 nanowires by thermal evaporation, 23 thin films by radio frequency magnetron sputtering, [24][25][26] thin films by pulse laser deposition, 27 and thin films by MOCVD. 28 We are not aware of any attempt by researchers to fabricate b-Ga 2 O 3 films at low substrate temperature by using the reducing-ambient CVD method, which operates at a source temperature > 500 °C.…”

mentioning

confidence: 99%

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

Jubu

Yam

Moses

2020

ECS J. Solid State Sci. Technol.

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Semiconductor nanostructures (NSs) are usually synthesized at short source-substrate distances where the substrate temperature is high using the chemical vapor deposition (CVD) technique. Herein, we report for the first time the growth of β -Ga2O3 NSs at low substrate temperature ∼260 °C in a CVD system when gallium (III) oxide powder was reduced to Ga vapor at 1000 °C under hydrogen atmosphere. The polycrystalline nature of the Ga2O3 NSs was confirmed by high-resolution X-ray diffraction (HR-XRD) analysis. Appearance of additional diffraction planes, increasing X-ray diffraction signal strength and shift of 2θ to smaller angles was observed with increasing hydrogen supply in the reactor. Field-emission scanning electron microscope (FE-SEM) revealed different morphologies with increasing amount of Ga2O3 on the substrate. Elemental analysis by using energy dispersive X-ray spectroscopy (EDX) showed increasing Ga atoms, and Ga/O atomic ratio with increase in hydrogen gas flow rate. Optical reflectance measurements by UV–vis-NIR spectrophotometer revealed optical bandgaps ranging from 4.94 to 4.82 eV, attributed to increasing film compactness, Ga/O and oxygen vacancies on the prepared films.

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Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

Liang

Han

2020

Physica Status Solidi (a)

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Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields. Many materials have been explored to realize deep UV photodetection. Amorphous gallium oxide (a‐GaOx), as a member of transparent amorphous oxide semiconductors (TAOSs), has attracted a great deal of attention due to its ultrawide bandgap and scalable synthesis at room temperature. Plenty of researches have been focused on this topic in recent years. Herein, the latest progresses in the preparation methods of a‐GaOx using radio‐frequency sputtering, pulsed laser deposition, atomic layer deposition, and other deposition techniques are summarized. Dependence of the stoichiometry, crystallinity, optical, electrical, and morphological properties on different preparation parameters and doping/alloying elements is tentatively discussed, as well as those deep UV photodetectors based on a‐GaOx and related thin films. Finally, a short summary with further possible investigations is provided for a better understanding and development of a‐GaOx materials and photodetectors.

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Electrical, optical and structural characteristics of gallium oxide thin films deposited by RF-sputtering

Cited by 4 publications

References 17 publications

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

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