Electrical, optical, structural and chemical properties of Al 2 TiO 5 films for high-к gate dielectric applications

Addepalli, Suresh; Ganapathi, K.; Uthanna, S.

doi:10.1016/j.mssp.2016.10.019

Cited by 9 publications

(4 citation statements)

References 42 publications

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“…It has been reported that grain boundaries may act as leakage paths where mobile charges can be transported through the percolation path along the grain boundaries in crystalline films [40][41][42]. The decrement in the leakage current with higher annealing temperatures may be attributed to the improvement in the oxide quality [43,44], i.e. a reduction in the oxide/border charges seen in table 1, passivation of the dangling bonds and complete formation of the silicate structure.…”

Section: Annealing Influence On Gate Leakage Currentmentioning

confidence: 96%

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

Lök

Kaya

Yılmaz

2018

Semicond. Sci. Technol.

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In this work, the thermal phase separation and annealing optimization of ZrSiO 4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO 4 /p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance-voltage (C-V ), conductance-voltage (G/ω) and leakage-current-voltage (I g -V g ).The results demonstrate that zirconium silicate formations are present at 1000 °C annealing with the SiO 2 interfacial layer. The film was in amorphous form after annealing at 250 °C. The tetragonal phases of ZrO 2 were obtained after annealing at 500 °C. When the temperature approaches 750 °C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 °C annealing matched the crystalline peaks of ZrSiO 4 . This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71×10 10 and the number of border traps decreased to 7.18×10 10 cm −2 with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10 −9 Acm −2 to 10 −6 Acm −2 . The MOS capacitor fabricated with the films annealed at 1000 °C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO 4 thin film annealed at 1000 °C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO 4 /Si interface. The barrier height of the device varies slightly from 0.776 eV to 0.827 eV under frequency dispersion. Briefly, it is concluded that the devices annealed at 1000 °C exhibit promising electrical characteristics.

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Section: Annealing Influence On Gate Leakage Currentmentioning

confidence: 96%

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

Lök

Kaya

Yılmaz

2018

Semicond. Sci. Technol.

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“…The TiO 2 –Al 2 O 3 –SiO 2 system is a promising base for a wide spectrum of glass–ceramic materials, which are important, for instance, in optical industry 1–3 and information technology, 4 for medical 5 and dental 6,7 applications, and for the development of refractories 8,9 and nanofillers in composite polymer electrolytes for lithium‐ion batteries 10 . A special attention is paid to ceramic films based on the TiO 2 –Al 2 O 3 –SiO 2 system, 11 which are considered as promising heat‐protecting coatings, 12 membranes for separation processes, 13,14 high‐κ dielectric materials in metal‐oxide‐semiconductor capacitors, 15 and interfacial layer in MoS 2 ‐based metallic filament memory 16 . The broad range of application areas of the materials based on the TiO 2 –Al 2 O 3 –SiO 2 system is made possible by valuable physicochemical properties of this system, which are also concentration dependent.…”

Section: Introductionmentioning

confidence: 99%

High‐temperature mass spectrometric study of thermodynamic properties in the TiO₂–Al₂O₃–SiO₂ system and modeling

Stolyarova

Vorozhtcov

Shemchuk

et al. 2022

Rapid Comm Mass Spectrometry

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Rationale The TiO2–Al2O3–SiO2 system is the base for various glass–ceramic materials, which have great practical value for a large number of modern technologies. Many TiO2–Al2O3–SiO2 materials are synthesized or applied at high temperatures, which justifies the relevance of the present study. Methods The samples in the TiO2–Al2O3–SiO2 system were synthesized using the method of induction melting in a cold crucible. The thermodynamic properties of the TiO2–Al2O3–SiO2 system were studied using the Knudsen effusion mass spectrometric method. The derived thermodynamic functions were optimized within the generalized lattice theory of associated solutions (GLTAS) approach and compared with the results of calculation using the semiempirical Kohler, Muggianu, Toop, Redlich–Kister, and Wilson methods based on the corresponding data in the binary systems. Results The SiO2 selective vaporization from the samples under study was shown at temperatures above 1940 K. The thermodynamic properties in the TiO2–Al2O3–SiO2 system, including the TiO2–SiO2 system, were obtained in the temperature range 1965–2012 K and were optimized using GLTAS to obtain the consistent concentration dependences of the component activities and excess Gibbs energies. Conclusions Positive deviations from the ideal behavior were observed in the TiO2–Al2O3–SiO2 system at high temperatures. Comparison of these values with the results of the modeling based on the GLTAS approach allowed the recommendations regarding the optimal semiempirical methods for the excess Gibbs energy calculation in different concentration ranges to be made.

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Section: Introductionmentioning

confidence: 99%

“…Literature data reported the formation another compound in the Al 2 O 3 -TiO 2 system, namely the aluminum titanate (tialite, Al 2 TiO 5 ) [21,22]. Tialite is an excellent refractory and thermal shock resistant material with wide band gap energy of 4.58 eV [21]. It exhibits a pseudobrookite crystal structure in the orthorhombic symmetry in which each Al 3+ or Ti 4+ cation is surrounded by six oxygen ions forming distorted oxygen octahedra.…”

Section: Introductionmentioning

confidence: 99%

Band gap tuning of oxygen vacancy-induced Al2O3-TiO2 ceramics processed by spark plasma sintering

2021

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Optical and photocatalytic applications of Al 2 O 3 and TiO 2 ceramics are limited, especially under visible light, due to their wide bandgap; so, this parameter plays an important and even decisive role in these applications. In the present study, Al 2 O 3 -TiO 2 ball milled powders were sintered by spark plasma sintering (SPS) at 1573 K. The products were characterized using XRD, SEM, UV-Vis and electrochemical methods. The results indicated effective improvement in the light absorbing capability of the composites (up to 95%) under visible light and the decrease of the band gap down to 2.2 eV owing to the increase of oxygen vacancies, which was, in turn, due to the reduced atmosphere of the sintering process. In addition, formation of a new phase (Al 2 TiO 5 ) during sintering greatly affected the absorption of Al 2 O 3 -TiO 2 composites in the visible light region due to the increase in the fraction of the charge carrier separation centers. Photo-luminescence spectroscopy also showed that tialite formation could be effective in improving the charge separation efficiency.

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Electrical, optical, structural and chemical properties of Al 2 TiO 5 films for high-к gate dielectric applications

Cited by 9 publications

References 42 publications

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

High‐temperature mass spectrometric study of thermodynamic properties in the TiO₂–Al₂O₃–SiO₂ system and modeling

Band gap tuning of oxygen vacancy-induced Al2O3-TiO2 ceramics processed by spark plasma sintering

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Electrical, optical, structural and chemical properties of Al 2 TiO 5 films for high-к gate dielectric applications

Cited by 9 publications

References 42 publications

Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

High‐temperature mass spectrometric study of thermodynamic properties in the TiO2–Al2O3–SiO2 system and modeling

Band gap tuning of oxygen vacancy-induced Al2O3-TiO2 ceramics processed by spark plasma sintering

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Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

High‐temperature mass spectrometric study of thermodynamic properties in the TiO₂–Al₂O₃–SiO₂ system and modeling