Electrical parameters of Al/InSe/C RF sensors

2015

Phys. Status Solidi A

In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50‐μm thick p‐type BN on a 0.2‐μm thick p‐type germanium thin film. The modeling of current–voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak‐to‐valley current ratio of (PVCR) of 63 at a peak (Vp) and valley (Vv) voltages of 1.84 and 2.30 V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0–3.0 GHz displayed a bandstop filter properties with notch frequency (fn) of 2.04 GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted fn and Q to 2.70 GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.

“…The zero‐bias barrier height (

φ_{0}

Section: Resultssupporting

confidence: 78%

Section: Resultssupporting

confidence: 64%

“…The respective equations of the other two currents, which are not reported in Ref. , are given as

I_{i s o} = (q V_{bi} A A \cdot \frac{T}{k}) {(1 - V / V_{bi})}_{} {normale}^{- q (V_{b1} + φ_{b}) / k T} ({normale}^{q V / k T} - 1)

and as

I_{tun} = I_{p} true(V / V_{p} true) \exp true(1 - V / V_{p} true) .

…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…Using the method described in Refs. for RS type, the width of the depletion region ( w ) and the barrier height under reverse‐biasing conditions (

φ_{b‐r}

φ_{b}

are found to be 0.129, 0.572, and 0.174 μm and as 0.72, 0.75, and 0.77 eV for Al/Ge/C, Al/Ge/BN/C, and C/Ge/BN/C channels, respectively.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Garni

2015

Phys. Status Solidi A

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices

Micro & Optical Tech Letters

Kmail

2020

In the current study, we have considered the induced phase transitions in Al/InSe thin film substrates and employing them for fabrication of InSe/Cu 2 O tunneling channels. The InSe substrates are observed to prefer the transition from the hexagonal γ-In 2 Se 3 to the rarely observed tetragonal InSe. The phase transitions are obtained by the thermally assisted diffusion of aluminum, which was already kept at 250 C in a vacuum media of 10 −5 mbar before the compensation of InSe. The tetragonal InSe also induced the crystallization of orthorhombic Cu 2 O with acceptable level of lattice matching along the a-axis. The Al/InSe/Cu 2 O/Au heterojunctions, which are electrically analyzed are observed to exhibit rectifying features with the current conduction being dominated by electric fields assisted thermionic emission (tunneling) through a barrier of width of 5.5 to 14.0 nm and barrier height of 0.19 to 0.30 eV. The ac analyses of the capacitance and conductance spectra of this device have shown that it can exhibit high/low capacitance and frequency dependent conductance switching modes at 0.12 GHz in addition to negative capacitance effect in the range of 0.12 to 1.80 GHz. The features of the device are promising as they indicate the suitability of the device for fabrication of field effect transistors, memory devices, and ultrafast switches.

SeO₂Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources

Physica Status Solidi (a)

Ghannam²

2022

Herein, the structural, morphological, compositional, and electrical properties of SeO2 microwires are studied and analyzed. Microwires of SeO2 with dimensions of 460 × 30 × 30 ( μ m ) 3 are electrically characterized in the temperature range of 17–300 K. SeO2 microwires are observed exhibiting nanocrystalline structures relating to a tetragonal phase. The microwires contained excess oxygen leading to some Se vacancies. The current–voltage (I–V) characteristics of the microwires displayed temperature‐dependent abrupt switching property revealing an “ON/OFF” current ratio of ≈90 at a threshold voltage of 0.48 V at 300 K. These features of the microwires remained down to 250 K. In addition, the temperature‐dependent electrical resistivity measurement showed that the microwires perform as a degenerate (metal like) semiconductors with quadratic temperature dependence (ρ false( T false) ∝ T 2 ). Moreover, impedance spectra analysis has shown that SeO2 microwires exhibit negative resistance and negative dielectric constant effects in the spectral ranges of 20–1800 MHz. The work here indicates that SeO2 microwires can perform much better than powders in pellets form or in thin‐film form. The resonance–antiresonance of dielectric constant and abrupt switching properties are accounted as remarkable features of the SeO2 microwires nominating them as abrupt electronic switches and signal amplifiers at workable in microelectronics.