Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Fan, Chih‐Peng; Tseng, Fan-Ping; Tseng, Chien-Hao

doi:10.3390/ma11050824

Cited by 17 publications

(12 citation statements)

References 30 publications

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“…Nonetheless, the I OFF remains in the 10 pA range suggesting that the number of holes remained small. Higher stability may be achieved via surface treatment such as UV treatment or plasma treatment [28,29].…”

Section: Resultsmentioning

confidence: 99%

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

2019

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The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm2/Vs) and high current ON/OFF ratios (IOn/IOff > ~107). But they both require vacuum processing that needs high investments and maintenance costs. Also, IGZO is prone to the scarcity and price of Ga and In. Other oxide semiconductors require the use of at least two cations (commonly chosen among Ga, Sn, Zn, and In) in order to obtain the amorphous phase. To solve these problems, we demonstrated an amorphous oxide material made using one earth-abundant metal: amorphous tin oxide (a-SnOx). Through XPS, AFM, optical analysis, and Hall effect, we determined that a-SnOx is a transparent n-type oxide semiconductor, where the SnO2 phase is predominant over the SnO phase. Used as the active material in TFTs having a bottom-gate, top-contact structure, a high field-effect mobility of ~100 cm2/Vs and an IOn/IOff ratio of ~108 were achieved. The stability under 1 h of negative positive gate bias stress revealed a Vth shift smaller than 1 V.

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Section: Resultsmentioning

confidence: 99%

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

2019

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“…[21][22][23] HfO 2 has also been extensively studied as a representative high-k material for gate dielectric and DRAM capacitor dielectric applications. [24][25][26] Many studies have been performed to increase the k value of HfO 2 , [27][28][29][30][31][32][33][34] for example, through the use of dopants such as carbon, [27] Si, [29] and Al 2 O 3 . [30,31,35] HfO 2 can exist in various crystal structures with different values of k such as the monoclinic (k % 20), orthorhombic (k % 30), cubic, and tetragonal structures (k > 40).…”

Section: Introductionmentioning

confidence: 99%

Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO₂ Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor

Kim

Ryu

Lee

et al. 2022

Physica Status Solidi (a)

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Herein, the deposition of homogeneous ZrxHf(1−x)O2 (x < 1) thin films for dynamic random‐access memory (DRAM) capacitor dielectric layers by atomic layer deposition (ALD) using a mixed precursor mixture of two precursors is investigated. ZrO2‐ and HfO2‐based thin films are widely used as capacitor dielectric layers because of their high dielectric constant (k) values and low leakage current properties. Herein, particularly, films with mixed structures of ZrO2/HfO2 are investigated because ZrO2 supports the growth of HfO2 in the tetragonal phase. However, the mixed structures deposited by ALD remain inhomogeneous even after the annealing process. The inhomogeneity results in part of the HfO2 remaining in the monoclinic phase, which reduces the k value. Herein, the formation of homogeneous tetragonal‐phase ZrxHf1−xO2 using a mixed precursor consisting of CpZr and CpHf precursors is investigated. The formation of the tetragonal phase in the ZrxHf(1−x)O2 thin films is determined through chemical and structural analysis. The variation of the electrical properties with the Zr/Hf concentration ratio is investigated. The electrical properties are enhanced compared to laminated ZrO2/HfO2 and single thin films.

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“…Since the first report on indium-gallium-zinc oxide thin-film transistors (TFTs) by Nomura et al in 2004, oxide semiconductor TFTs have drawn significant attention owing to their high electrical performance, low fabrication temperature, and superior large area uniformity [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. To date, a variety of oxide semiconductors have been developed to enhance the electrical performance and stability of oxide TFTs [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ]. However, fabricating p-channel oxide TFTs consisting of electrical performance comparable to that of n-channel oxide TFTs remain a challenge.…”

Section: Introductionmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

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Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Cited by 17 publications

References 30 publications

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO₂ Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

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Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Cited by 17 publications

References 30 publications

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO2 Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

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Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO₂ Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor