Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP

Reddy, V. Rajagopal; Rao, L. Dasaradha; Janardhanam, V.; Kang, Min‐Sung; Choi, Chel‐Jong

doi:10.2320/matertrans.m2013281

Cited by 17 publications

(2 citation statements)

References 33 publications

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“…42) From these values, the barrier height at each temperature was calculated. The Norde method 46,47) was also applied to the forward IV data to obtain the barrier height. The plots of F(V ) vs. V for each temperature, described as following equation, is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

2023

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We grew ZnO films at different temperatures on glass substrates using thermal atomic layer deposition and investigated the current conduction mechanism of Pt/ZnO junctions. For ZnO samples grown at 46 and 96°C, the current flow through the ZnO layer was not possible at low temperatures such as 298 and 320 K because the ZnO layer under Schottky contacts were wholly depleted. However, the current conduction was observed with increasing the temperature, which was found to be dominated by the Schottky emission at 360 and 380 K and the PooleFrenkel emission at 380 and 400 K. For ZnO sample grown at 141°C, the strong tunneling current could occur because very thin depletion region was formed because of the high carrier concentration of ZnO layer. The observed difference in the current conduction can provide a guidance how growth temperature of ZnO should be controlled to design the low-temperature grown ZnO based devices built on glass substrates.

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Section: Resultsmentioning

confidence: 99%

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

2023

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“…Due to incorporation of fullerene nanoparticles, the ideality factor has been reduced from 3.787 to 1.495. High ideality factor (n>1) can be ascribed to low Schottky barrier's wide distribution and can also due to the interface doping or specific interface structure [28][29][30][31]. Recombination generation, and tunneling may lead to a greater than unity value of ideality factor.…”

Section: Fig 5 Ln I-v Plot Of Organic Device Without and With C60mentioning

confidence: 99%

Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles

Sen

Manik

2021

AMR

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Characterization of electrical parameters of Copper Phthalocyanine dye has been done in the present work. In the context of electrical parameters, the Schottky barrier and ideality factor of the organic device has been measured and the effects of fullerene nanoparticles on these parameters have been studied. Analysis of electrical parameters has been done by the current-voltage characteristics of the device. The influence of fullerene nanoparticles lessens the Schottky barrier to 0.71 eV from 0.75 eV. The current flow is assumed to be injection limited as the Schottky barrier is greater than 0.3 eV - 0.4 eV. The Schottky barrier is also estimated by the Norde method. Norde's method shows lessening of barrier height from 0.70 eV to 0.65 eV under the influence of fullerene nanoparticles. The measured ideality factor value reduces from 3.787 to 1.495 in presence of fullerene nanoparticles. The charge injection mechanism at metal-organic contact gets influenced by the interfacial Schottky barrier height. Decrease in both Schottky barrier and ideality factor attribute to the increase in charge flow and it allows a reduction in the device’s transition voltage from 2.5 V to 1.0 V.

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The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

et al. 2020

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Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP

Cited by 17 publications

References 33 publications

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles

The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

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