Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

Abstract

The electrical properties of silicon dioxides doped with impurities ͑fluorine and/or nitrogen͒ are investigated in this article. Pure silicon dioxide (SiO 2), fluorine-doped silicon oxide ͑SiOF͒, nitrogen-doped silicon oxide ͑SiON͒, and nitrogen-doped SiOF ͑SiOFN͒ are our choices for investigation in this study. The oxide films are prepared from liquid-phase-deposited fluorinated silicon oxides under O 2 or N 2 O annealing. The leakage current as a function of applied voltage for impurity-doped oxides was simulated using a generalized trap-assisted tunneling ͑GTAT͒ model at moderate fields of 5-8 MV/cm. Two important parameters, trap energy level ⌽ t and trap concentration N t , are directly derived by this model from simple current-voltage characteristics. The relationships of ⌽ t and N t on various experimental conditions ͑annealing temperature, time, gases, and initial oxide thickness͒ are comprehensively studied based on GTAT modelings.

Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W−1 Based on Nitrogen‐Doped TiOx and AlOx Insulator Layers

“…Figure 7e shows that, at higher voltages, the conduction mechanism changes from TAT to FNT-like tunneling where the electron can tunnel through the barrier from a trap state, as observed previously in refs. [36,45,55,56]. The voltage is sufficiently high that the required tunneling width is reduced and can occur without the assistance of traps.…”

Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure

“…This can be explained by the existence of deep traps in the dielectric layer at the tunneling distance from the semiconductor-dielectric interface. The presence of such traps changes the transport mechanism from Fowler-Nordheim tunneling to trap-assisted tunneling (TAT) (6). In this case the effective barrier height is lowered by the trap depth value.…”

Growing High-Performance Tunneling Oxide by CF[sub 4] Plasma Pretreatment

“…6 Thin fluorinated oxides have been investigated and found to have lower barrier height than silicon dioxide. 7 Fluorinated oxides have also been widely studied for their high resistance against ionized radiation and hot electrons. 2,[8][9][10] Additionally, the nitrided oxide grown on F-implanted silicon was found to be able to suppress anomalous leakage currents.…”