Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy

Jiang, Desheng; Makita, Yunosuke; Ploog, K.; Queisser, H. J.

doi:10.1063/1.330581

Cited by 209 publications

(113 citation statements)

References 23 publications

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“…The highest reported n-type doping was limited to 2x1019 cm- 3 and can be only obtained by elaborate MBE growth [13]. On the other hand the highest hole concentrat ions reported for InP are cons i stent ly in the range 3 to 4x10 1 8 cm-3 [14] whereas in GaAs hole concentrations in excess of 1020 cm-3 can be obtained [15].…”

Section: Thementioning

confidence: 99%

Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency

Walukiewicz

1987

MRS Proc.

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We propose the existence of a Fermi level stabilization energy in III-V semiconductors which provides a reference level for the electronic part of defect annihilation energies. It is shown that the position of the stabilization energy with respect to the band edges determines the maximum free carrier concentration which can be obtained through doping. The proposed model accounts for previously unexplained trends in implant activation efficiency in III-V semiconductors.

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Section: Thementioning

confidence: 99%

Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency

Walukiewicz

1987

MRS Proc.

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“…Te tends to accumulate on the surface by segregation and forms a stable surface compound presumably GaTe, resulting in non-uniform doping profile. For the planar growth, this problem had been solved by reducing the growth temperature below ~530 °C [176]. Indeed for the GaAs shell growth in this study, a low temperature growth together with a high V/III ratio resulted in a successful n-type doping of GaAs using Te.…”

Section: Dopingmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

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“…The reported band gap narrowing was either proportional to n 1/3 [3,5] or n 5/12 [6,13]. Some low temperature PL (LTPL) results were explained by assuming that the Fermi energy relative to the conduction band minimum depends on n by the n 2/3 power rule for n ] 10 18 cm − 3 [6]. In the LTPL experiments, the donor -acceptor (D-A) pair luminescence is dominant for electron concentrations less than 1× 10 18 cm…”

Section: Introductionmentioning

confidence: 99%

“…In the heterojunction-based devices, the band gap shift due to heavy doping result in valence and conduction band discontinuity of the heterojunction interface [12]. Both the band gap narrowing and Fermi energy, m f , of heavily doped GaAs were analyzed as a function of doping concentration n using PL [3,[5][6][7][8][9][10][11] and cathdoluminescence [13]. The reported band gap narrowing was either proportional to n 1/3 [3,5] or n 5/12 [6,13].…”

Section: Introductionmentioning

confidence: 99%

“…Both the band gap narrowing and Fermi energy, m f , of heavily doped GaAs were analyzed as a function of doping concentration n using PL [3,[5][6][7][8][9][10][11] and cathdoluminescence [13]. The reported band gap narrowing was either proportional to n 1/3 [3,5] or n 5/12 [6,13]. Some low temperature PL (LTPL) results were explained by assuming that the Fermi energy relative to the conduction band minimum depends on n by the n 2/3 power rule for n ] 10 18 cm − 3 [6].…”

Section: Introductionmentioning

confidence: 99%

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Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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Silane (SiH 4 ) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH 3 ) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH 4 mole fraction, growth temperature, TMGa and AsH 3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SiH 4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH 3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10 17 −1.). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL,. We also obtained an empirical relation for the band gap shrinkage, DE g in Si-doped GaAs as a function of electron concentration. The value of DE g (eV) = −2.75×10 − 8 n 1/3 , indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH 3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model.

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Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy

Cited by 209 publications

References 23 publications

Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency

Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Si incorporation and Burstein–Moss shift in n-type GaAs

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