Electrical properties and spectroscopic ellipsometry studies of covellite CuS thin films deposited from non ammoniacal chemical bath

Diliegros‐Godines, C. J.; Lombardero-Juarez, D.I.; Machorro-Mejía, R.; González, R.; Pal, Mou

doi:10.1016/j.optmat.2019.03.022

Cited by 23 publications

(6 citation statements)

References 36 publications

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“…Considering that the three samples have similar particle sizes and surface passivation, this phenomenon is speculated to stem from the notable difference in their hole densities, as already evidenced by the above XRD, Raman, and XPS analysis of the disulfide bond (i.e., Figure e,f,h and Table S2). For clarity, the Mie–Drude model simulation , and the hall-effect measurement were specifically adopted to quantifying the hole density in the three sample. As shown in Table S2, the two methods give similar values and a similar variation trend for the hole density, i.e., the longer the reaction time, the fewer holes that are detected in the samples.…”

mentioning

confidence: 99%

Plasmonic Hot Hole Extraction from CuS Nanodisks Enables Significant Acceleration of Oxygen Evolution Reactions

Huang

Wang

Xing

et al. 2021

J. Phys. Chem. Lett.

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Localized surface plasmon resonance (LSPR) is well known for its unique ability to tune the reactivity of plasmonic materials via photoexcitation; however, it is still an open question as to whether plasmonic holes can be directly extracted to drive valuable chemical reactions. Herein we give an affirmative answer by reporting an illumination-enhanced oxygen evolution reaction (OER) using CuS nanodisks (NDs) alone as the electrocatalyst. Impressively, under 1221 nm laser or xenon lamp illumination, an unprecedented reduction of OER overpotential was observed on the CuS ND-coated electrodes. Transient absorption combined with Mott–Schottky measurements disclosed that near-infrared (NIR) irradiation generated abundant hot holes from LSPR damping in the CuS NDs accounting for the remarkable OER performance enhancement. This is the first report on the direct utilization of plasmonic hot holes in CuS nanomaterials for boosting OER performance, opening up a new route to designing NIR-active photocatalysts/electrocatalysts by exploiting the unique LSPR properties.

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mentioning

confidence: 99%

Plasmonic Hot Hole Extraction from CuS Nanodisks Enables Significant Acceleration of Oxygen Evolution Reactions

Huang

Wang

Xing

et al. 2021

J. Phys. Chem. Lett.

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“…However, among all the nanohybrid devices, the lowest V SET / V RESET of ∼−0.44 ± 0.10/+0.50 ± 0.10 V is exhibited by the RCS 3 device followed by the RSS 4 and RZS 4 devices with V SET / V RESET values of ∼−0.68 ± 0.08/+0.79 ± 0.09 V and −1.2 ± 0.1/+3.15 ± 0.15 V, respectively. This may be due to the increase in resistivity from CuS → SnS → ZnS as reported earlier. − The materials with higher resistivity require much higher voltage for electron flow, which results in higher values of V SET / V RESET for rGO-ZnS. Furthermore, to test the stability of the nanohybrid devices, retention and endurance tests were performed for 10 4 s and 10 3 cycles, respectively, and are shown in Figure d,e and Figures S6–S11.…”

Section: Resultsmentioning

confidence: 82%

Semiconductor-Grafted Polymer-Embedded Reduced Graphene-Oxide Nanohybrid for Power-Efficient Nonvolatile Resistive Memory Applications

Gogoi

Das

Maiti³

et al. 2020

ACS Appl. Nano Mater.

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Hybrid material-based resistive random-access memories (ReRAM) have gained immense popularity as data storage devices owing to their high scalability, easy processability, and cost-effectiveness. Herein, we report the resistive switching (RS) performances of various nanohybrid materials, consisting of metal-sulfide (ZnS, CuS, and SnS)-grafted reduced graphene oxide (rGO), by embedding into a thin polymeric layer. An active layer with a sandwich electrode configuration (ITO/nanohybrid-PMMA composites/Al) is realized for electrical studies. Additionally, the RS phenomena are modulated through precisely varying the concentration of nanohybrid-polymer composite fillers. The electrical studies display the bipolar-resistive switching properties along with an extremely low V SET/V RESET of ∼−0.44 ± 0.10/+0.50 ± 0.10 V. Also, a very low write/erase power consumption (P SET/P RESET) of ∼1.02 × 10–5 / 1.18 × 10–5 Wcm–2 is obtained for the CuS-grafted rGO nanohybrid. Furthermore, a current ON/OFF (I ON/I OFF) ratio of ∼103–104 is obtained for all the fabricated devices, which lowers the level of misreading in the nanohybrid devices. All the devices display excellent RS properties, especially low operating voltage, high reliability, and high persistency for optimum loading of nanofillers concentration ranging from 0.3 to 0.5 wt %. The interfacial synergistic effect coupled with trapping and detrapping of charge carriers is considered responsible for the observed resistive switching behavior.

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“…The carrier mobility decreases with an increasing copper concentration in the thin films, decreasing from 4 and reaching 1 cm 2 /(V s), where these values are like others reported elsewhere. , This decreasing mobility trend may be influenced by the continuous formation of tiny CuS covellite crystals in the films, which increase the carrier concentration but decrease the mobility simultaneously. The decrease in mobility is therefore mainly attributed to the varying morphology of the films that affect the transport of holes through the films, where the increasing incipient crystallites act as trapping centers hindering the carrier mobility. , …”

Section: Resultsmentioning

confidence: 99%

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Cabrera-German,

Martínez-Gil,

Fuentes-Ríos

et al. 2023

ACS Omega

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Careful analysis of the chemical state of Cu x Zn 1– x S thin films remains an underdeveloped topic although it is key to a better understanding of the phase transformations and the linking between structural and optoelectronic properties needed for tuning the performance of Cu x Zn 1– x S-based next-generation energy devices. Here, we propose a chemical formulation and formation mechanism, providing insights into the successive ionic layer adsorption and reaction (SILAR) processing of Cu x Zn 1– x S, in which the copper concentration directly affects the behavior of the optoelectronic properties. Via chemical, optoelectronic, and structural characterization, including quantitative X-ray photoelectron spectroscopy, we determine that the Cu x Zn 1– x S thin films at low copper concentration are composed of ZnS, metastable Cu x Zn 1– x S, and CuS, where the evidence suggests that a depth compositional gradient exists, which contrasts with homogeneous films reported in the literature. The oxidation states for copper and sulfide species indicate that the films grow following a formation mechanism governed by ionic exchange and diffusion processes. At high copper concentrations, the Cu x Zn 1– x S thin films are covellite CuS that grew on a ZnS seed layer. Hence, this work reiterates that future research related to fine-tuning the application of this material requires a careful analysis of the depth-profile compositional and structural characteristics that can enable high conductivity and transparency.

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Electrical properties and spectroscopic ellipsometry studies of covellite CuS thin films deposited from non ammoniacal chemical bath

Cited by 23 publications

References 36 publications

Plasmonic Hot Hole Extraction from CuS Nanodisks Enables Significant Acceleration of Oxygen Evolution Reactions

Plasmonic Hot Hole Extraction from CuS Nanodisks Enables Significant Acceleration of Oxygen Evolution Reactions

Semiconductor-Grafted Polymer-Embedded Reduced Graphene-Oxide Nanohybrid for Power-Efficient Nonvolatile Resistive Memory Applications

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

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Electrical properties and spectroscopic ellipsometry studies of covellite CuS thin films deposited from non ammoniacal chemical bath

Cited by 23 publications

References 36 publications

Plasmonic Hot Hole Extraction from CuS Nanodisks Enables Significant Acceleration of Oxygen Evolution Reactions

Plasmonic Hot Hole Extraction from CuS Nanodisks Enables Significant Acceleration of Oxygen Evolution Reactions

Semiconductor-Grafted Polymer-Embedded Reduced Graphene-Oxide Nanohybrid for Power-Efficient Nonvolatile Resistive Memory Applications

Insights into the SILAR Processing of CuxZn1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

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Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment