ELECTRICAL PROPERTIES CdO THIN FILMS PREPARED BY SPRAY PYROLYSIS.

Tembhurkar, Y. D.; ijrbat,

doi:10.29369/ijrbat.2014.02.i.0088

Cited by 2 publications

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“…Several techniques have been investigated to prepare CuInS 2 thin films. Thin films of ternary compound have been prepared by several methods such as evaporation [7][8][9], electro-deposition [11] [12], chemical bath deposition [13] and spray pyrolysis [5,6,[14][15][16][17][18][19][20][21][22]. Electronic structures were reported by Jaffe and Junger [23], there are fundamental role to deep study with support (ideal) to all new researchers.…”

Section: Introductionmentioning

confidence: 99%

Variation of some physical properties of CuInS2 films by substrate temperature

Meshram¹,

Tembhurkar²,

Chimankar³

2019

IJSRPAS

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Spray pyrolysis is one of the most convenient, economical, inexpensive and simple methods for depositing large area semiconducting thin films. Semiconducting ternary CuInS 2 thin films have been deposited onto the glass substrate by varying substrate temperature from 275 0 C, at the interval of 25 to 350 0 C by using aqueous solution of Cupric chloride, Indium trichloride and thiourea of 0.02 M and Seems to be one of the more important parameters affecting the physical properties of the semiconductor. The lattice parameter a and c at room temperature of the tetragonal unit cell were calculated for all these samples by Bruker AXS D8 Advance X-ray diffraction (XRD) techniques with Cu K α (wavelength = 1.5418 Å) radiation.Conductivity of thin films determined by Four Probe method and hot probe technique wasdetermined to exhibit ptype conductivity. Due to temperature effect, shows the atoms are arrange regular in compound of these samples prepared at various temperatures 250, 300 and 350 0 C. As the films are not doped intentionally defect observed in intrinsic nature operative to be produced by Sulphur interstitials. Grain sizes were studied by Scanning Electron Microscope.

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Section: Introductionmentioning

confidence: 99%

Variation of some physical properties of CuInS2 films by substrate temperature

Meshram¹,

Tembhurkar²,

Chimankar³

2019

IJSRPAS

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“…CdSe thin films were prepared using different technique such as thermal evaporation(PVD) [1], sputtering [5], electron beam evaporation(EBE) [6], chemical bath deposition(CBD) [7], spray pyrolysis(SP) [8], electrodeposition [9], photoelectrochemical [10], SILAR [11] and photochemical deposition [12].…”

Section: Introducctionmentioning

confidence: 99%

Investigation the effect of annealing temperature on the optical properties of CdSe thin films

2018

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Investigation the effect of annealing temperature on the optical properties of CdSe thin films, Duhok, Irak. Innovaciencia. 2018; 6(1): 1-5. http://dx.ABSTRACT Introduction: CdSe is an important II-VI semiconducting material due to its typical optical properties such as small direct band gap (1.7 eV) and a high refractive index and, thus, a major concern is focused on the investigation of optical properties of CdSe thin films which is important to promote the performances of the devices of solid -state such as SC (solar cells), thin film transistors, LED (light-emitting diodes), EBPL (electron-beam pumped lasers) and electroluminescent devices. In the present work, CdSe thin films were deposited by thermal evaporation method and the results have been analysed and presented. Materials and Methods: CdSe thin films has been deposited on glass microscopic slides as substrates of (75×25×1 mm) under room temperature using PVD technique. CdSe blended powders gets evaporated and condensed on the substrate. The film thickness (t = 100 5 nm) which is measured using Michelson interferometry method. Transmission spectrum, from 200-1100 nm, are scanned using two beams UV-VIS Spectrophotometer (6850 UV/Vis. Spectrophotometer-JENWAY). The deposited films then were annealed at temperature range of (1500C to 3500C) under vacuum to have a stable phase of the material and prevent surface oxidization. Results and Discussion: A transmittance spectrum of CdSe thin film is scanned over wavelength range 200 to 1100 nm using a (6850 UV/Vis. Spectrophotometer-JENWAY) at room temperature. The transmittance percentage between the as-deposited film and the annealed films change varies from (17.0%) to (47.0%). It is clearly seen that there is a shift toward higher energy (Blue Shift) in the transmittance spectrum. As annealing temperature increased the transmittance edge is shifted to the longer wavelength (i.e., after annealing the CdSe films shows red shifts in their optical spectra). The band gap was found within the range 1.966-1.7536 eV for CdSe thin film. As annealing temperature increases, the Eg continuously decreases. Conclusions: CdSe thin films have been deposited using Physical Vapor Deposition (PVD) Technique. It is found that the transmission for asdeposited films is (17%) and increases to (47%) as annealing temperature increases. Beside this the energy gap for as-deposited CdSe film is (1.966eV) and decreased from (1.909 eV) to (1.7536eV) as the annealing temperature increases. There is a strong red shift in optical spectrum of the annealed CdSe films. There is a gradual shift of the annealed films thin film spectra as compared of bulk CdSe films.

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ELECTRICAL PROPERTIES CdO THIN FILMS PREPARED BY SPRAY PYROLYSIS.

Cited by 2 publications

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Variation of some physical properties of CuInS2 films by substrate temperature

Variation of some physical properties of CuInS2 films by substrate temperature

Investigation the effect of annealing temperature on the optical properties of CdSe thin films

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