Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces

Abstract

Electrical properties of Al/Al2O3/ZnO (0001¯) and Al/Al2O3/ZnO (0001) metal-insulator-semiconductor (MIS) diodes have been investigated. The capacitance-voltage curves of them suggest that there are lower fixed and trapped charge densities for the Al/Al2O3/ZnO (0001¯) MIS diode than those for the Al/Al2O3/ZnO (0001) one. X-ray photoelectron spectroscopy has revealed that the valence band offset of the high-quality Al2O3/ZnO (0001¯) heterointerface is 1.2 ± 0.2 eV. These findings indicate that the Al2O3/ZnO (0001¯) heterointerface can be regarded as a suitable combination for the fabrication of ZnO-based field effect transistors.

High-Efficient NUV Emission with Excellent Thermal Stability in Cd/Pb-Free AS-ZnO QDs by ALD without Surface Passivation

“…Instead of the commonly used spin-coating technique for QDs in the solution state, a QD film in this case is directly deposited by ALD. As illustrated in Scheme , the above obtained ZnO QDs are first capped with an Al 2 O 3 layer to form the AS-ZnO QD structure, which can secure an effective QC for ZnO owing to the much bigger bandgap of Al 2 O 3 in comparison with ZnO. , Besides, the Al 2 O 3 capping layer also acts as the buffer layer for ZnO growth in the next layer, ensuring the distribution uniformity of ZnO QDs in the whole film. Then by alternatively depositing Al 2 O 3 and ZnO QD layers, a multilayer QD thin film (QDs-ML) can be achieved.…”

Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature

“…The shielding distance or band bending region is known as extrinsic Debye length L D which is formulized by Refs. [15,16],…”

Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks

“…The corresponding flat band voltage V FB values to C FB are extracted from the first C-V hysteresis sweep. The flat band capacitance (C FB ) for them can be calculated by the following equation [16]:…”