Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks

Zhang, J.W.; He, Gang; Chen, H.S.; Lv, Jianguo; Gao, Juan; Liu, M.; Sun, Zhaoqi

doi:10.1016/j.ceramint.2015.04.128

Cited by 7 publications

(3 citation statements)

References 26 publications

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“…The density of the total positive charges Q ox can be extracted from C-V curves by the following equation: Q ox ¼ ÀC max (V fb À Ø ms )/Aq [35,36], where Ø ms is the work-function difference between Al and Si substrate. A is Al electrode area.…”

Section: Capacitance-voltage Characteristicsmentioning

confidence: 99%

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Xiao

Sun

et al. 2016

Ceramics International

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Section: Capacitance-voltage Characteristicsmentioning

confidence: 99%

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Xiao

Sun

et al. 2016

Ceramics International

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“…To overcome the shortcomings of single high-k gate dielectrics, a laminated structure was designed. The reported lamination designs include inorganic/inorganic structures, such as HfGdO/HfTiO, Al 2 O 3 /HfTiO, HfO 2 /Gd 2 O 3 , Al 2 O 3 /perovskite/Al 2 O 3 , Ta 2 O 5 /Y 2 O 3 , and Al 2 O 3 /Ta 2 O 5 , and organic/inorganic composite laminates, such as HfO X /PAE/HfO X , SiO X /Stb/SiO X , and ZrO/PAE/ZrO . Two or more kinds of materials with complementary properties are used to construct double-layer or multilayer gate dielectrics, which can improve the above shortcomings to a certain extent.…”

Section: Introductionmentioning

confidence: 99%

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics

Zhang

Lin

et al. 2020

ACS Appl. Electron. Mater.

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High-speed operation and low-power-consumption requirements have accelerated the development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work, the integration of all-sputtering-derived HfGdO high-k gate dielectrics with amorphous InGaZnO (a-InGaZnO) films has been reported, yielding significant improvements in the performance of a-InGaZnO TFTs. By adjusting the multilayer dielectric sequence, TFT device performance can be precisely manipulated. It has been detected that a-InGaZnO TFTs with an optimized Al 2 O 3 /HfGdO dielectric configuration have demonstrated superior electrical performance, including a high field-effect mobility (μ FE ) of 23.3 cm 2 • V −1 •S −1 , a large on/off current ratio of 1.2 × 10 7 , a low subthreshold swing of 0.09 V/dec, and good stability under bias stress. Finally, a low-voltage-operated resistor-loaded unipolar inverter has been assembled on the base of Al 2 O 3 /HfGdO/a-InGaZnO TFTs, demonstrating full swing characteristics and high gain of ∼20. All of the experimental results indicate promising potentials for all-sputtering-derived Al 2 O 3 /HfGdO laminated dielectrics toward the achievement of low-cost, low-power-consumption, and largearea all-oxide optoelectronics.

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“…Optimum properties can be obtained by using nanolaminated, dopped and mixed oxides such as lanthanum gadolinium oxide [37], HfGdO/HfTiO [38], Al-doped TiO2 [39], Gd doped HfO2 [40], HfO2/Ta2O5 [41], HfTiO/Y2O3 [42], SrTa2O6 [43], Gd2O3/HfSiO [44] etc.…”

Section: High Permittivity Dielectricsmentioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

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Development of materials and technologies for microelectronics is required by the needs of the constantly increasing level of integration of microelectronics circuits. Increase of the integration level compels downscaling of all the dimensions of devices, which in its turn requires very thin layers with exceptional quality due to rather high electric fields at working conditions. First, technological improvements are adopted aimed at fabrication of materials with uniform quality, geometrical flatness and extremely low density of intentionally introduced defects. Second, new fabrication methods are developed providing materials with much better quality. Third, new materials showing better properties than the standard (conventional) ones are obtained and developed further.Decreasing the dimensions of the layers changes the nature of the physical phenomena involved in the functioning of devices. Quantum mechanical mechanisms are more and more important in the description of the properties of the materials and devices on the nanoscale. The question arises where is the limit of the possibilities of the materials and technologies for nanoscale electronics.

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Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks

Cited by 7 publications

References 26 publications

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics

Progress in Materials for Microelectronics and Further Challenges

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Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks

Cited by 7 publications

References 26 publications

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics

Progress in Materials for Microelectronics and Further Challenges

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Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics