Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature

Nabatame, Toshihide; Ohi, Akihiko; Chikyo, Toyohiro; Kimura, Masayuki; Yamada, Hideshi; Ohishi, Tomoji

doi:10.1116/1.4869059

Cited by 27 publications

(25 citation statements)

References 20 publications

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“…Figure The defect charges in the Al 2 O 3 and (Ta/Nb)O x films were also examined using the relationship between V fb and EOT high-k , as shown in Fig. 22 We confirmed that the Al 2 O 3 and (Ta/Nb)O x films were high quality because there were not charged. Here, there were three sources of charges: a sheet of charges (Q ss ) at the SiO 2 /Si interface, uniformly distributed charges (q ohigh-k ) in the high-k materials such as Al 2 O 3 and (Ta/Nb)O x , and a sheet of charges (Q IL ) at the high-k/SiO 2 interface in the Pt/high-k/ SiO 2 /Si stack structure.…”

Section: A Characteristics Of Al 2 O 3 and (Ta/nb)o X Filmssupporting

confidence: 52%

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Nabatame

Ohi

Ito

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inConduction processes in metal-insulator-metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition J. Vac. Sci. Technol. A 32, 01A122 (2014); 10.1116/1.4843555 Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP Appl. Phys. Lett. 96, 022904 (2010); 10.1063/1.3292217 Thermally stable amorphous ( Al Mo Nb Si Ta Ti V Zr ) 50 N 50 nitride film as diffusion barrier in copper metallization Appl. Phys. Lett. 92, 052109 (2008); 10.1063/1.2841810Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications The authors studied the characteristics of Si/Al 2 O 3 /(Ta/Nb)O x /Al 2 O 3 /SiO 2 /Pt charge trap capacitors fabricated by atomic layer deposition and postmetallization annealing at 400 C. Al 2 O 3 and (Ta/Nb)O x films are amorphous and have negligible fixed charges. In program mode, a flatband voltage (V fb ) drastically shifts toward the positive direction at a short program time of 10 À4 s. A large V fb shift of approximately 4 V arises after programming at 1 mC/cm 2 because there is a large difference in the conduction band offset between the (Ta/Nb)O x -charge trapping layer (TNO-CTL) and the Al 2 O 3 -blocking layer (AlO-BL) (1.8 eV). In the retention mode, most of the trapped electrons in the TNO-CTL transfers across the Al 2 O 3 -tunneling layer (AlO-TL) rather than the AlO-BL. The thickness of the AlO-TL affects the V fb shift degradation behavior in the retention mode. The injected electrons are dominantly located at the TNO-CTL/ALO-BL interface, determined from the thickness dependence of the TNO-CTL on the V fb shift.

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Section: A Characteristics Of Al 2 O 3 and (Ta/nb)o X Filmssupporting

confidence: 52%

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Nabatame

Ohi

Ito

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

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“…Thus, much of the research work is widespread on the application of thermodynamically metastable anatase phase. The deposition of titania by vacuum based processes are extensively investigated, but requires additional attention during the process [11][12][13][14]. Alternatively, solution based process is quite attractive, as titania can be obtained with high purity and chemical homogeneity [15].…”

Section: Introductionmentioning

confidence: 99%

High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

Kumar

Mondal

Kumar

et al. 2015

Materials Science in Semiconductor Processing

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“…Although this is usually a concern for nanoparticles, nanocrystalline particles could be formed in the ALD films. Nabatame et al [ 34 ] studied anatase TiO 2 films fabricated by using ALD and postdeposition annealing, and discussed the flat band voltage change caused by the bottom interface dipole as well as how the dipole relates to oxygen introduced into the TiO 2 layer during oxidation annealing. Few studies reported the effect of annealing on the properties of plasma or thermal ALD TiO 2 films.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

et al. 2020

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In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO2) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO2 films. The experimental results show that the sALD TiO2 has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO2 films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO2 films have a low absorption coefficient at the level of 10−3 cm−1 at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO2 film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO2 compact layer in perovskite solar cell applications.

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Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature

Cited by 27 publications

References 20 publications

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

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