Electrical Properties of BaTiO₃ Thin Film Grown by the Hydrothermal-Electrochemical Method

Abstract

Novel nanowires patterned with holes and nanotubes of silicon oxide have been fabricated on silicon substrates by a catalyst-assisted route. The diameters of these nanowires and nanotubes vary from 20 to 100 nm. The patterned nanowires have encapsulated holes along the longitudinal direction. High-resolution transmission electron microscopy reveals that the patterned nanowires and nanotubes are amorphous. The growth of the nanostructures is probably controlled by a modified vapour-liquid-solid process.

Effect of Precursor Pyrolysis on the Dielectric Properties of Hydrothermally Derived Barium Titanate Thin Films

“…9 Other studies use a combination of electrochemical and hydrothermal processes to produce continuous BaTiO 3 films with a dielectric constant and a loss tangent of 350 and 0.10, respectively. 10 Hydrothermal growth of oriented BaTiO 3 films on SrTiO 3 or SrTiO 3 /SrRuO 2 substrates below 200°C has also been investigated, and continuous crystalline films were successfully produced with a dielectric constant of 141, but with a relatively high dielectric loss value of 0.90 at 10 kHz. 11 Additionally, BaTiO 3 films have been grown directly from TiO 2 single crystals 12 or TiO 2 amorphous layers 13 below 200°C; however, film dielectric properties were not measured.…”

Piezoelectric property of an epitaxial lead titanate thin film deposited by the hydrothermal method

“…1 Up to now, a variety of films, such as BaTiO 3 , lead zirconate titanate ͑PZT͒, and PbTiO 3 have been reported. [2][3][4][5][6][7][8][9] The deposition temperature is lower than the Curie temperature; this means that the film does not go through phase transition during the deposition process. Therefore, the residual stress becomes very small compared to the other methods that require 600°C crystallization.…”

Ferroelectric Properties of Flash Evaporated Barium Titanate Thin Films

“…Among the most resistive thin films found in the literature are those of Kajiyoshi et al, who prepared BaTiO 3 thin films by a hydrothermal-electrochemical method, directly on Ti substrates [18]. Test of their Al/BaTiO 3 /Ti or Ag/BaTiO 3 /Ti capacitors display highly asymetric I-V characteristics, leading to overall resistivities of 10 12 -cm at −2V, and 5.0 × 10 9 -cm at +2V.…”

“…Among the techniques that have been used we can mention vacuum evaporation [8], laser ablation [9,10], rf sputtering [11][12][13][14], molecular beam 22 R. A. Zárate et al epitaxy [15], sol-gel [16,17] and hydrothermal methods [18]. In particular, the dielectric constant increases monotonically from 10 to 2000 as the films go from amorphous to polycrystalline.…”