Electrical properties of cadmium and zinc doped CuInS2

Effect of Zinc Incorporation in CuInS2Thin Films Grown by Vacuum Evaporation Method

“…Moreover, up to 2 at.% Zn the transmission decreases. The absorption coefficients deduced from optical measurements are greater than 10 4 cm −1 in the range 1.4-2.6 eV after annealing. The direct band gap energy increased after annealing from 1.467 to 1.585 eV with increasing Zn% molecular weight.…”

“…For example, the incorporation of iron during the crystal growth of CuInS 2 by chemical vapor transport was studied [8,9]. Mittleman and Singh [10] investigated the electrical properties of cadmium and zinc doped CuInS 2 crystals grown by the Bridgman technique. Ueng and Hwang [11] concluded that in this case the crystals annealed in cadmium and zinc vapors exhibited shallow activation energies of 0.02 and 0.025 eV, respectively.…”

Effect of zinc doping and temperature on the properties of sprayed CuInS2 thin films

“…Doping of iron during the crystal growth of CuInS 2 by chemical vapor transport is investigated [15,16]. Electrical properties of cadmium and zinc doped CuInS 2 crystal grown by the Bridgman technique is studied by Mittleman and Singh [17]. Ueng and Hwang [18] showed that the crystals annealed in Cd and zinc vapors exhibited shallow activation energies 0.02 and 0.025 eV, respectively.…”

Seebeck Coefficient and Optical Studies of Cadmium Doped CuInS2Single Crystal

“…An efficiency of ≈ 16% has already been exhibited in solar cells fabricated with CuInS 2 thin films with an area of 1 cm 2 [8]. Apart from photovoltaic applications, the compound is also investigated for practical applications in non-linear optical devices [9][10][11]. In order to control a conduction type and obtain a low resistivity, several impurities have been studied [12][13][14][15][16][17].…”