Electrical properties of CdS and CdSe films deposited on vibrating substrates

Mohanchandra, K. P.; Uchil, J.

doi:10.1063/1.368028

Cited by 11 publications

(4 citation statements)

References 19 publications

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“…This is true both for MOCVD grown films and the films deposited by thermal evaporation (see Tables 1 and 2), and is in accordance with earlier reported data [8,20]. Although the two deposition techniques showed similar results and tendencies, for the films obtained by thermal evaporation, slightly higher TCR values and lower resistances were obtained.…”

Section: Resultssupporting

confidence: 93%

“…Therefore, the results for CdS films on silicon nitride can be compared with literature data for CdS on other substrates. The resistivity values reported in the literature vary from 10 3 to 10 8 O cm [11][12][13][14][15] for chemical bath deposition to 10 À1 -10 3 O cm [16][17][18][19][20][21] for MOCVD grown and evaporated CdS and CdZnS films on glass.…”

Section: Resultsmentioning

confidence: 99%

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Growth, annealing and thermo-electrical properties of Cd1−xZnxS thin films for microbolometers

Stolyarova¹,

Weinstein²,

Nemirovsky³

2008

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Growth, annealing and thermo-electrical properties of Cd1−xZnxS thin films for microbolometers

Stolyarova¹,

Weinstein²,

Nemirovsky³

2008

Journal of Crystal Growth

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“…4 Levels allocated in the range 0.27-0.32 eV have been reported for thin films prepared at different growth conditions and post-grown treatments. [17][18][19][20] In a second stage, the behavior for the same data vs. T Ϫ1/4 , as seen in the inset of Fig. 3, indicated that conduction is dominated by hopping through deep levels into the energy bandgap, and the variable range hopping model of Mott was satisfied for the as-grown samples at lower temperatures.…”

Section: Resultsmentioning

confidence: 72%

Properties of CdSe Polycrystalline Thin Films Grown by Chemical Bath

Lozada‐Morales

Rubín‐Falfán

Portillo-Moreno

et al. 1999

J. Electrochem. Soc.

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Semiconducting CdSe films have been continuously studied as a photoconductive material 1,2 for their importance in photovoltaic energy conversion, 3,4 and lately, for their noticeable quantum confinement effect properties. [5][6][7][8] Wurtzite is the stable phase of CdSe, and the sphalerite CdSe modification is a metastable structural phase. In spite of the relatively abundant works published in CdSe thin films, this material is the least studied II-VI compound in thin-film format, especially for cubic CdSe. Many physical properties of cubic CdSe remain as unconcluded studies, for instance, band structure and phonon dispersion, among others. By using new deposition techniques like molecular beam epitaxy, 9 laser ablation, 10 electrochemical atomic layer, 11 etc., it has been possible to grow CdSe in cubic phase with a wide variety of changing growth conditions. In this way, a lot of information has been gained recently for a better understanding of the physical properties of thin films of this material.In this work the chemical bath deposition (CBD) technique was used to prepare polycrystalline CdSe thin films on glass substrates having about 200 nm thickness. Although this technique has been already used to grow this material, 1,2,12 the optical and electrical properties usually depend upon the growing parameters such as temperature, stirring, chemical agents, and concentrations during the grown process. Thus, stoichiometric thin films of CdSe in cubic phase were obtained similar to CdS with the same structural symmetry using the CBD technique. 13 Band structure analysis from optical absorption data evidenced two critical points at 1.84 and 2.2 eV, respectively. Theoretical calculations of band structure of cubic modification of CdSe do not predict the existence of this last electronic transition; 14,15 however, the recent experimental data of dielectric function in cubic CdSe reveal a spin-orbit split of 0.41 eV in accordance with our results. 16 Dark conductivity (DC) measurements in the 100-500 K range showed the presence of a high density of deep levels that promotes the carrier conduction described by the Mott's variable range hopping (VRH) model. After this first round of DC measurements, two consecutive rounds, in the same range of temperature, were carried out. Then the high density of deep levels disappeared and the conductivity was dominated by a thermally activated process following Arrhenius behavior. The crystalline quality of the films improved already after the first cycle of measurements, as this acted like a thermal annealing.

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“…CdS thin films can be prepared by different techniques [4][5][6][7][8][9][10][11] such as thermal evaporation, close spaced sublimation, metal organic chemical vapor deposition (MOCVD), molecular-beam epitaxy (MBE), chemical bath deposition (CBD), chemical spray pyrolysis (CSP), electrodeposition and sputtering. Among these methods, thermal evaporation is one of the suitable methods for depositing large area thin film for solar cell application [12].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate

Gupta

Patidar

Baboo

et al. 2010

Front. Optoelectron. China

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A systematic study has been made on the behavior of Al/n-CdS thin film junction on flexible polymer substrate (polyethylene terephthalate, PET) grown using thermal evaporation method. Temperature dependence of I -V measurements for this junction has been done which closely follow the equations of Schottky barrier junction dominated by thermionic emission mechanism. Intrinsic and contact properties such as barrier height, ideality factor and series resistance have been calculated from I -V characteristics. The barrier height of Al/n-CdS junction is found to increase with increase in temperature whereas ideality factor and series resistance decrease with increase in temperature.

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Electrical properties of CdS and CdSe films deposited on vibrating substrates

Cited by 11 publications

References 19 publications

Growth, annealing and thermo-electrical properties of Cd1−xZnxS thin films for microbolometers

Growth, annealing and thermo-electrical properties of Cd1−xZnxS thin films for microbolometers

Properties of CdSe Polycrystalline Thin Films Grown by Chemical Bath

Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate

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