Electrical properties of CdS/polyaniline heterojunction

Abstract

Conducting polyaniline (PANI) has been synthesized using Sol-gel technique with chemical oxidation process. Chemically prepared cadmium sulphide has been printed on pellet of conducting polyaniline using screen-printing technique. I-V characteristics of conducting polyaniline and CdS printed conducting polyaniline have been recorded at room temperature using Keithley Electrometer. The results indicated that I-V of conducting polyaniline shows non-ohmic behaviour and I-V characteristic of CdS printed PANI, a CdS/ PANI heterojunction, shows the rectification effect and confirms that a diode can be fabricated by using simple technique.

Polyaniline-doped benzene sulfonic acid/epoxy resin composites: structural, morphological, thermal and dielectric behaviors

“…1,2 For this reason, over the past decades, polymer-matrix composites containing conductive fillers have been extensively studied due to their growing demand in advanced technology and electronic systems. 3 They are used in the form of thin layers produced with dense materials containing various products with high electric permittivity and/or magnetic permeability, such as metal oxides or carbon black and so on, dispersed in a diverse polymeric matrix. However, these products are considered as heterogeneous disordered systems; they represent 60-90% of the system's weight, 4 eliminating the insulating characteristics of the final material.…”

SHI irradiation effects on electrical and optical properties of PPy–SnO2 nanocomposite

“…Under the influence of applied external field the localized motions of the trapped charges in PPy serve as effective electric dipoles that contribute to the formation of polarons and bipolarons, which are the dominant charge carriers in PPy. However, their mobilities are very low ∼10 −3 cm 2 /V s 46. As the strength of the applied field increases, the degree of structural distortion increases, resulting in the increased concentration of charge carriers, which in turn in the increment of current.…”

“…I – V characteristics of this junction show the rectifying effect due to the formation of the depletion layer at the SnO 2 /PPy interface. At higher voltages the I – V dependence is almost linear because the depletion layer is minimized at the interface and bulk PPy behaves as a series resistance in the junction 46. In the reverse bias corresponding to the positive potential to SnO 2 , the depletion layer increases and almost all the current is carried by the minority charge carriers, i.e., holes of SnO 2 .…”

Mechanical Property of CdS Coated PET and Mica Films

“…Commercially available polyethylene terephthalate and mica films (thickness of the order of about 20-50 f^m) have been used as substrate .CdS has been prepared by chemical method using CdCb & H2S [10,11]. In this method an appropriate ratio of cadmium chloride is taken in solution form.…”