Electrical Properties of Cu1—xAgxGaTe2 Thin Films

Abstract

Machine engineering has an inherent potential concerning the use of high performance material like Carbon Fibre Reinforced Plastics. The authors show some successful substitutions of formerly conventionally designed components by CFRP‐parts. The examples are taken from several branches of machine engineering, especially from textile machine engineering.

Thermoelectric properties of Ag1−xGaTe2 with chalcopyrite structure

“…As shown in Fig. 16 The S decreased with increasing temperature up to 650 K and kept nearly constant above 650 K. The S values of the samples of x ¼ 0 and 0.01 and those of the samples of x ¼ 0.03 and 0.05 were almost the same. The q also decreased with decreasing Ag content.…”

“…2 On the other hand, it is known that AgGaTe 2 has a chalcopyrite structure which belongs to the space group I42d. 16 It has also been reported that AgGaTe 2 exhibits quite low n and high S, e.g., room temperature values of the n and the S of a thin film AgGaTe 2 are 10 13 cm À3 and þ900 lV/K, respectively. [5][6][7][8][9][10][11] Recently, single crystals of AgGaTe 2 have been grown and their physical properties have been examined.…”

“…4 The semiconducting and non-liner optical properties of AgGaTe 2 have been widely studied. 16 Against this background, the TE properties of AgGaTe 2 were investigated. [12][13][14] The previous research on the phase state of AgGaTe 2 has mentioned that AgGaTe 2 is a pseudo-binary compound with non-stoichiometric compositions in the Ga 2 Te 3 and Ag 2 Te system.…”

“…16 The results of the Hall measurements indicated that the n of AgGaTe 2 was increased by the reduction of Ag. Disc-shaped samples in the dimensions of 10 mm in diameter and 0.5 mm in thickness were used for the Hall measurements.…”

Metallic magnetoconductivity in copper gallium telluride

“…At room temperature the measured values of n and µ are 2.93 × 10 18 cm -3 and 85.32 cm 2 V -1 s -1 . With m* = 1.26m 0 [4,33], we obtained D = 3.367 × 10 -5 m 2 s -1 . If we suppose that the dielectric constant κ = 10 as in CuInSe 2 [2], then F is determined from Eq.…”