Electrical properties of donors in gallium phosphide

Pődör, B.; Pfeifer, J.; Csontos, L.; Nádor, N.; Deák, F.

doi:10.1002/pssa.2210760236

Cited by 6 publications

References 28 publications

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Influence of the temperature dependence of the thermal impurity activation energy on the analysis of hall measurements on GaP

Siegel

Kühnel

1984

Phys. Stat. Sol. (a)

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An analysis of Hall measurements on n‐type and p‐type GaP is performed by means of least‐squares fits including the temperature dependences of the thermal impurity activation energies which result from the theoretically proposed linear dependence ED on N D+1/3. By comparison of fit results obtained with the standard model (ED = const.) and with the ED(n)‐model, it is shown that the neglect of the ED(n) dependence causes especially too high values for N c′/g and NA. Therefore the replacement of the standard model by the ED(n)‐model yields lower values for the density of states effective masses of GaP (mc* = 1.09m0 and mV* = 0.52m0,) and higher values for the slope α of the regression line in the ED − N A1/3 plot. Using the ED(n)‐fit it is possible to determine for a single sample the optical value of the activation energy of the dominating impurity which allows conditionally the identification of the chemical nature of this impurity.

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Influence of the temperature dependence of the thermal impurity activation energy on the analysis of hall measurements on GaP

Siegel

Kühnel

1984

Phys. Stat. Sol. (a)

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Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Siegel¹,

Kühnel²,

Koi³

et al. 1986

phys. stat. sol. (a)

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Undoped n‐InP and Zn‐doped p‐InP are grown by the SSD method. Hall measurements on wafers cut from the polycrystalline n‐InP ingots give values between 1015 and 1016 cm−3 for the carrier concentration averaged over the crystallites of the wafer. From the electron mobilities measured at 77 K on single crystalline samples (maximally 5.0 × 104 cm2/Vs) it can be concluded on the high purity and perfection of this material. Zn doping yields p‐InP with p = (3 to 4) × 1016 cm−3and μ = (113 to 140) cm2/Vs atroom temperature. The hole mobilities at 77 K(1700 to 2160 cm2/Vs) are the highest ones reported for InP up to now. By fitting of the p(T) curves between 30 and 500 K concentrations and activation energies for the shallow acceptor Zn and for a medium deep acceptor present beside Zn are determined.

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