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2014 Les concentrations d'électrons et de donneurs, et les mobilités des porteurs des couches de GaP non dopées, préparées par l'épitaxie de phase liquide sont étudiées en fonction du traitement thermique précédant la croissance. Les donneurs principaux ou la présence de plus d'un donneur sont identifiés par les énergies d'ionisation des donneurs. On observe une incorporation de soufre après de courts traitement thermiques, tandis qu'après de longs traitements thermiques, on observe une incorporation de silicium. Abstract. 2014 Electron and donor concentrations and mobilities of non doped liquid phase epitaxial GaP layers were studied when varying the annealing process prior to growth. Main donors or the presence of more than one donor were identified by donor ionization energies. After short anneallings the incorporation of sulphur, after long annealings the incorporation of silicon were observed.

High purity In0.53 Ga0.47 As layers were grown on semi-insulating InP:Fe substrates by liquid phase epitaxy by adding small amounts of dysprosium (rare earth) to the melt. Hall effect and photoluminescence measurements showed that the addition of Dy strongly reduced the carrier and residual donor concentration, with a concurrent shift of the excitonic luminescence toward higher energies. The observed effects are ascribed to the gettering of residual donor impurities in the melt by Dy, as well as to the effects of possible incorporation of Dy into the grown layers.

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