Photoluminescence and Double-Crystal X-Ray Study of InGaAs/InP: Effect of Rare Earth (Dysprosium) Addition During Liquid Phase Epitaxial Growth

Abstract

High purity In0.53 Ga0.47 As layers were grown on semi-insulating InP:Fe substrates by liquid phase epitaxy by adding small amounts of dysprosium (rare earth) to the melt. Hall effect and photoluminescence measurements showed that the addition of Dy strongly reduced the carrier and residual donor concentration, with a concurrent shift of the excitonic luminescence toward higher energies. The observed effects are ascribed to the gettering of residual donor impurities in the melt by Dy, as well as to the effects of possible incorporation of Dy into the grown layers.

Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements

“…Several earlier papers have reported the results of adding rare earth elements to different materials during purification or during crystal growth [1,2]. Narrow line width emissions were obtained at selected wave lengths from the ultraviolet to infrared when GaN was doped with rare earth elements [3].…”