Observations on residual donors in GaP LPE

Pfeifer, J.; Pődör, B.; Csontos, L.; Nádor, N.

doi:10.1051/rphysap:019780013012074100

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…The anisotropy ~-10 deduced from recent cyclotron parameter agrees well with the value of 20 _ 6 resonance measurements [17]. These Acta Physica Academiae Scientit~rum Hungaricae 47,1979 values are about 2 meV higher than the currently suggested optical ionization energies [7,9], and they are about 2 to 5 meV higher than the thermal ionization energies derived from our Hall effect measurements [15]. The theoretical fit resulted in the binding energy of the 2p_+ state avalue of 110 + 4 cm -1.…”

Section: Discussionsupporting

confidence: 89%

“…In the spectrum shown in Fig. According to the Hall effect and photoluminescence measurements [15] the dominant donor in this sample is S. But besides lines due to S, absorption fines belonging to Si are also present in this spectrum. Absorption lines attributed to the excitation of electrons bound to S and Si donors are marked accordingly.…”

Section: Resultsmentioning

confidence: 77%

“…These layers eontain predominantly S of Si donors [15]. These layers eontain predominantly S of Si donors [15].…”

Section: Resultsmentioning

confidence: 99%

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Optical excitation of electrons bound to shallow donors in GaP

Bodor

Laczkó

1979

Acta Physica

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Infrared transmission measurements of GaP with S, Te and Si donor impurities revealed absorption lines due to the excitation of electrons bound to lower lying ls like states to higher lying p like states, ls -+ 2p~ transitions were observed for S, Te and Si donors as well as transitions to other Po and p+ states. Optical ionization energies of S, Te and Si were determined as 891 • cm -1, 776 • 5 cm -1 and 713 • 5 cm-% respectively, using the effective mass approximation.

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Section: Discussionsupporting

confidence: 89%

Section: Resultsmentioning

confidence: 77%

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Optical excitation of electrons bound to shallow donors in GaP

Bodor

Laczkó

1979

Acta Physica

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Electrical properties of donors in gallium phosphide

Pődör¹,

Pfeifer

Csontos

et al. 1983

Phys. Stat. Sol. (a)

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The thermal ionization energies of S, Te, and Si donors in GaP and their dependences on impurity concentration are determined from an analysis of Hall effect data. An ellipsoidal six‐valley model is used incorporating the effects of valley—orbit splitting of the ground state of the P‐site donors. A careful characterization of the samples ensures that results are obtained on samples containing only one type of dominant donor. The thermal ionization energies of the above donors extrapolated to infinite dilution are (105.0 ± 5.7), (94.1 ± 2.6), and (83.5 ± 1.7) meV, respectively. The valley—orbit splitting energies of S and Te donors are also obtained, amounting to (34 ± 9) and (23.5 ± 9) meV, respectively.

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On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

Monecke

Siegel

Ziegler

et al. 1981

Physica Status Solidi (b)

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It is proved by Hall effect measurements on Te-doped GaP and on ZnSiP, that the thermal activation energies of the majority impurities depend on the minority impurity concentrations. A new theoretical explanation for this concentration dependence is presented.Mittels Halleffektmessungen an Te-dotiertem GaP und an ZnSiP, wird gezeigt, daB die thermischen Aktivierungsenergien der Majoritiitsstorstellen von der Konzentration der Minoritiitsstorstellen abhangen. Fur diese Konzentrationsabhiingigkeit wird cine neue theoretische E r k k u n g gegeben.It is well known that in doped and compensated semiconductors three types of conductivity mechanisms with different activation energies c3 < E~ < c1 can be found, in general (see e.g . [l]).To be specific we shall concentrate on a n n-type semiconductor in the following. I n this case c3 corresponds to the phonon-assisted hopping motion of electrons from neutral donors t o empty positive donors, the energy spread of the donor levels being caused by the fluctuating electric field of the charged impurities. This hopping motion is well understood on the basis of the theory of Miller and Abrahams The activation energy c1 is connected with the energy ED, necessary to excite an electron from a donor into the conduction band, and deviates from ED slightly due to the fact, that the temperature dependence of the mobility deviates from p -T P 3 l 2[5]. The energy E, or E D is of principle interest in semiconductor physics and technology. However, it is understood much less both theoretically and experimentally than cZ and E~: not only its absolute value for different impurities cannot be calculated theoretically in satisfying agreement with experimental results, but also its large concentration dependence (if measured as a thermal activation energy e.g. by Hall experiments) is not well established even experimentally as explained below.I n this paper we want to contribute both experimental results and a new theoretical explanation for the concentration dependence of E D of shallow impurities.The phenomenon of the concentration dependence of the thermal activation energy of impurity electrons into the nearest host energy band is known for more than

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Observations on residual donors in GaP LPE

Cited by 8 publications

References 6 publications

Optical excitation of electrons bound to shallow donors in GaP

Optical excitation of electrons bound to shallow donors in GaP

Electrical properties of donors in gallium phosphide

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

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