Electrical properties of HfO N thin films deposited by PECVD

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…Overall, they can be categorized into two major approaches based on the reaction mechanism during the preparation: CVD and PVD-based process. CVD-based approaches mainly include metalorganic chemical vapor deposition (MOCVD) [70,71], plasma-enhanced chemical vapor deposition (PECVD) [72,73], atomic-layer chemical vapor deposition (ALCVD) [74][75][76][77][78][79], and photo-assisted CVD synthesis [80][81][82][83][84]. These growth methods provide more flexible synthesis process and an alternative to achieve lower cost.…”

Amorphous hafnium oxide thin films for antireflection optical coatings

“…Ideally, dielectric thin films for industrial applications should be in an amorphous state (smooth, and with few grain boundaries). This state is important to prevent leakage current paths along grain boundaries as well as it is preferred for gate oxides [4,5]. Also, amorphous HfO 2 (a-HfO 2 ) films find potential application in flexible thin film capacitors, fiber optic waveguides for communication networks, computer-memory elements, and optical coatings on polymer substrates [3,6].…”

Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric

“…Several high-κ materials are considered to replace SiO 2 gate dielectric, among all these candi-dates, HfO 2 has been mentioned as the most promising, because is more thermodynamically stable on Si than other high-k materials, it has a reasonably high dielectric constant (~25) and a relatively large band gap (5.68 eV). [15,16] However this film presents a poor interface quality with Si, high oxygen diffusion rate through the film, causing a low-κ interfacial layer growth, and a low crystallization temperature (500°C) [17,18]. To produce good interface quality an ultra-thin SiO 2 film is grown between both materials, producing a high k/SiO 2 stack.…”