Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes

Izzo, Gaetano; Litrico, Grazia; Calcagno, L.; Fóti, G.; Via, F. La

doi:10.1063/1.3018456

Cited by 28 publications

(20 citation statements)

References 28 publications

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“…The irradiation can result in the embedding of the additional charge into the gate oxide and an increase of surface state density at the SiO 2 /SiC interface . Simultaneously, radiation defects introduced by electron irradiation can remove electrons from the low doped drift n ‐layer and degrade electron mobility .…”

Section: Resultssupporting

confidence: 91%

Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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Radiation resistance of state‐of‐the‐art commercial wide‐bandgap power transistors, 1700 V 4H‐SiC power MOSFETs and 200 V GaN HEMTs, to the total ionization dose was investigated. Transistors were irradiated with 4.5 MeV electrons with doses up to 2000 kGy. Electrical characteristics and introduced defects were characterized by current–voltage (I–V), capacitance–voltage (C–V), and deep level transient spectroscopy (DLTS) measurements. Results show that already low doses of 4.5 MeV electrons (>1 kGy) cause a significant decrease in threshold voltage of SiC MOSFETs due to embedding of the positive charge into the gate oxide. On the other hand, other parameters like the ON‐state resistance are nearly unchanged up to the dose of 20 kGy. At 200 kGy, the threshold voltage returns back close to its original value, however, the ON‐state resistance increases and transconductance is lowered. This effect is caused by radiation defects introduced into the low‐doped drift region which decrease electron concentration and mobility. GaN HEMTs exhibit significantly higher radiation resistance. They keep within the datasheet specification up to doses of 2000 kGy. Absence of dielectric layer beneath the gate and high concentration of carriers in the two dimensional electron gas channel are the reasons of higher radiation resistance of GaN HEMTs. Their degradation then occurs at much higher doses due to electron mobility degradation.

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Section: Resultssupporting

confidence: 91%

Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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“…43 was used in this study. 3 For antisite defects, only the migrations by exchange processes are considered, with the migration barriers of 11.6eV and 11.7eV for C Si and Si C , respectively, 44,45 ignoring the vacancy-mediated migration mechanism. 51 Moreover, the Fermi level can be modified by deep donors or acceptors levels introduced by defects, and a high dose irradiation could transform the n-type material into an intrinsic or p-type one.…”

Section: Okmc Simulation For Long-term Defect Evolutionmentioning

confidence: 99%

“…1,2 However, ion implantation during device fabrication, as well as heavy-ion irradiation in space application will inevitably induce displacement defects. Such defects can undergo migration, recombination and aggregation in the long term, leading to degradation in electronic, [3][4][5] and thermal 6,7 properties as well as dimensional instability. 8,9 The long-term evolution of displacement damage by heavy ions is therefore fundamental in the fabrication and application of SiC devices.…”

Section: Introductionmentioning

confidence: 99%

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Guo

Martín-Bragado

et al. 2014

Journal of Applied Physics

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Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the long-term evolution of displacement damage induced by heavy-ion irradiation in cubic silicon carbide. The isochronal annealing after heavy ion irradiation is simulated, and the annealing behaviors of total interstitials are found consistent with previous experiments. Two annealing stages below 600K and one stage above 900K are identified. The mechanisms for those recovery stages are interpreted by the evolution of defects. The influence of the spatial correlation in primary damage on defect recovery has been studied and found insignificant when the damage dose is high enough, which sheds light on the applicability of approaches with mean-field approximation to the long-term evolution of damage by heavy ions in SiC.

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“…The tabulated values and Figure clearly shows that selectively SHI irradiation improved the I – V characteristics of the SBD. But, it is well generalized that SHI irradiation at higher fluence produce generation centres in material which causes more leakage current in SBDs . However, if initially the leakage current is very low, then, sometimes deactivation of dopants may cause its reduction .…”

Section: Resultsmentioning

confidence: 99%

Tailoring Surface and Electrical Properties of Ni/4H‐nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation

Kumar

Maan

Akhtar

2018

Physica Status Solidi (a)

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In this experiment, the atomic scale surface and electrical properties of Ni/4H-nSiC Schottky barrier diode (SBD) are selectively modified (using a shadow mask with openings in active area i.e., Schottky contact, of the device only and covered remaining area) and irradiated with 200 MeV 107 Ag 14þ ions at a fluence of 10 13 ions cm À2 . The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics are discussed in detail to rationalize the performances of pristine and irradiated SBDs. Compared to pristine and conventional way irradiated (i.e., without any mask) SBDs, the I-V characteristics of selectively irradiated SBD show significant improvement in barrier height and leakage current. Atomic force microscopic (AFM) features of selectively irradiated SiC show modified surface properties at irradiated, masked, and transition sites. The observed AFM features are due to the quodons induced transient of atomic disorders/defects in crystalline SiC and their pile-up at transition site. This controlled way localization of defects reorder the atomic structure at the edges of SBD and thus improves its electrical characteristics. status solidi physica a Schottky Diodes www.pss-a.com

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Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes

Cited by 28 publications

References 28 publications

Radiation resistance of wide-bandgap semiconductor power transistors

Radiation resistance of wide-bandgap semiconductor power transistors

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Tailoring Surface and Electrical Properties of Ni/4H‐nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation

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