Electrical Properties of InSb Irradiated with Fast Neutrons

Abstract

(a), V. L. BONCH-BRUEVICH (b), M. P. GIORGADZE (a), and N. I. KTJEDIANI (a) Variations are studied of the electrical properties of n-and p-InSb induced by fast neutron irradiation (flucnces from 1 x lo1' to 8 x lOl9n/m2). Temperature dependences of the concentration and mobility of the charge carriers is studied by the Hall effect method in the temperature range from 77 to 300 K -both before and after irradiation. Parameters of a random field produced by disordered regions are calculated. Charge carrier scattering by a smooth random field created by disordered regions seems t o be the dominant scattering mechanism after irradiation I I O T O I i~> l l l BLrcTpbIx H~~~T~O I I O B(1 x 10' 7 no 8 x lo1* n/m2