A low‐temperature method is described of obtaining MIS‐structures of the type Ge3N4–GaAs. Some results are given on the physical properties of the structures.

No abstract

(a), V. L. BONCH-BRUEVICH (b), M. P. GIORGADZE (a), and N. I. KTJEDIANI (a) Variations are studied of the electrical properties of n-and p-InSb induced by fast neutron irradiation (flucnces from 1 x lo1' to 8 x lOl9n/m2). Temperature dependences of the concentration and mobility of the charge carriers is studied by the Hall effect method in the temperature range from 77 to 300 K -both before and after irradiation. Parameters of a random field produced by disordered regions are calculated. Charge carrier scattering by a smooth random field created by disordered regions seems t o be the dominant scattering mechanism after irradiation I I O T O I i~> l l l BLrcTpbIx H~~~T~O I I O B(1 x 10' 7 no 8 x lo1* n/m2

The spectral dependence is investigated of the light absorption coefficient, α, of GaAs subjected to a fast‐neutron irradiation. In the tail region a complex dependence is found: three parts are seen each of which is described by an exponential dependence of α on photon energy. The experimental results are explained using the concept of random fieldsgenerated by irradiation produced clusters. The statistical characteristicsof the fields are calculated and a quantitative agreement with the experimental data is obtained. Various parts of the spectrum are ascribed to absorption tails due to three kinds of random fields: 1. a deformation potential field due to cluster produced stresses, 2. a smooth field produced by a setof charged clusters in the GaAs matrix, and 3. an intrinsic random field inthe amorphous substance of the clusters.