GaAs/Ge3N4/Al structures and mis field-effect transistors based on them

Bagratishvili, G. D.; Dzhanelidze, R. B.; Kurdiani, N.I.; Pashintsev, Yu.I.; Saksaganski, O.V.; Skorikov, V.A.

doi:10.1016/0040-6090(79)90065-8

Cited by 11 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Particularly, amorphous germanium nitrogen alloys (a-GeN,) have been synthesized with band gap ranging from 0.7 to 3.5 eV [l to 51 which can be potentially used as semiconductors, isolating layers, anti-reflective coatings, etc., depending on the alloy nitrogen content. This material has been prepared by different techniques such as rf glow discharge [3, 51, rf sputtering [2,4, 51, evaporation of crystalline germanium nitride [6,7] among others. Apart from sputtering, all the other techniques are suitable for the deposition of high nitrogen content alloys.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Deposition Conditions on the Properties of Amorphous Germanium Nitrogen Alloys

Vilcarromero¹,

Marques²

1995

Physica Status Solidi (b)

View full text Add to dashboard Cite

A study of the band-gap tailoring of amorphous germanium nitrogen alloys is presented. They have been prepared by the rf reactive sputtering technique, using a c-Ge target in an Ar + NH, atmosphere.The alloy composition is found to be strongly dependent on the deposition conditions. The optical gap of the material could be tailored from approximately 1.0 to about 3.0 eV by varying the rf power, substrate temperature, nitrogen and hydrogen partial pressures. The rf power, and not the gas composition, is found to be the most important parameter in determining the nitrogen concentration. The hydrogen concentration, on the other hand, has a small influence on the band gap, while the temperature plays an important role on the determination of the alloy structure.

show abstract

Section: Introductionmentioning

confidence: 99%

Influence of the Deposition Conditions on the Properties of Amorphous Germanium Nitrogen Alloys

Vilcarromero¹,

Marques²

1995

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. I. The choice of the insulator and deposition

Bagratishvili

Dzhanelidze

Jishiashvili

1983

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

A qualitative model of the electronic interaction a t the insulator-semiconductor interface is proposed. On the basis ofthis model a sequence of electron-donor ability of the oxygen and nitrogen atoms in oxides and nitrides of the silicon subgroup is established which makes i t possible to choose an insulator for a high-quality IS interface. A low-temperature method of obtaining thin films of nonstoichiometric germanium oxynitrides is described based on reactive sputtering of germanium in hydrazine plasma preceded by a lorn-temperature in situ etching of a semiconductor surface.

show abstract

The Deposited Insulator/III-V Semiconductor Interface

Wager

Wilmsen

1985

Physics and Chemistry of III-V Compound Semiconductor Interfaces

View full text Add to dashboard Cite

GaAs/Ge3N4/Al structures and mis field-effect transistors based on them

Cited by 11 publications

References 8 publications

Influence of the Deposition Conditions on the Properties of Amorphous Germanium Nitrogen Alloys

Influence of the Deposition Conditions on the Properties of Amorphous Germanium Nitrogen Alloys

Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. I. The choice of the insulator and deposition

The Deposited Insulator/III-V Semiconductor Interface

Contact Info

Product

Resources

About