Electrical properties of low-dimensional chalcogenides TlCu2−X2 (X = Se, Te) and (Tl1−Ba )Cu2Se2

Ohtani, Toshio; Takeuchi, Masaki; Sasaki, Satoshi; Kishi, Hirofumi; Nakata, T.

doi:10.1016/j.jallcom.2004.04.027

Cited by 12 publications

(7 citation statements)

References 26 publications

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“…In fact, χ ab /χ c (300 K) = 1.3 for x= 0 with c/a = 3.27, and increases to 1.5 for x = 0.09 that has c/a = 3.32. The χ increases with temperature with no evidence of a maximum, or Curie-Weiss behavior; Tl-122 behavior is very similar to that observed in SDW CrAs [35] and parents of AFe 2 As 2 with A=Ca, Sr, and Ba [34], which are multiband semi-metallic materials consisting of both electron and hole Fermi surfaces that nest to give SDW upon cooling. From dχ/dT analyses, x=0 gives a peak at 132 K, x=0.05 gives 138 K and 140 K anomalies, and x=0.09 gives a peak at 129 K. The low temperature susceptibility results increase below these anomalies (below ~ 100 K), probably indicating magnetic correlations due to Tl substitution.…”

Section: Resultsmentioning

confidence: 58%

Anomalous magneto-elastic and charge doping effects in thallium-doped BaFe2As2

Sefat¹,

Li²,

Cao³

et al. 2016

Sci Rep

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Within the BaFe2As2 crystal lattice, we partially substitute thallium for barium and report the effects of interlayer coupling in Ba1-xTlxFe2As2 crystals. We demonstrate the unusual effects of magneto-elastic coupling and charge doping in this iron-arsenide material, whereby Néel temperature rises with small x, and then falls with additional x. Specifically, we find that Néel and structural transitions in BaFe2As2 (TN = Ts = 133 K) increase for x = 0.05 (TN = 138 K, Ts = 140 K) from magnetization, heat capacity, resistivity, and neutron diffraction measurements. Evidence from single crystal X-ray diffraction and first principles calculations attributes the stronger magnetism in x = 0.05 to magneto-elastic coupling related to the shorter intraplanar Fe-Fe bond distance. With further thallium substitution, the transition temperatures decrease for x = 0.09 (TN = Ts = 131 K), and this is due to charge doping. We illustrate that small changes related to 3d transition-metal state can have profound effects on magnetism.

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Section: Resultsmentioning

confidence: 58%

Anomalous magneto-elastic and charge doping effects in thallium-doped BaFe2As2

Sefat¹,

Li²,

Cao³

et al. 2016

Sci Rep

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“…some dichalcogenides (TiS 2 [5] and NbSe 2 [7]) and exotic superconductors [8]. The coefficient of the T 2 term in ␤-MoTe 2 of (1.54 × 10 −8 cm K −2 ) is approximately one order smaller than of TlCu 2−x Se 2 [6] and in the same order as that of TiS 2 [5](2.0 × 10 −8 cm K −2 ).…”

Section: Discussionmentioning

confidence: 96%

Quadratic temperature dependence up to 50 K of the resistivity of metallic MoTe2

Zandt¹,

Dwelk²,

Janowitz³

et al. 2007

Journal of Alloys and Compounds

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“…3,6,7 This fact rules out the existence of two oxidation state of thallium, because electrons would then fill the conduction band and act as charge carriers. 3,6 Ohtani et al 7 investigated the electrical nature of Tl x Cu 3 -x Se 2 (x = 1.1, 1.2 and 1.25) in more detail, concluding that conduction occurs predominantly by holes, but there is also a small contribution of electrons. A substantial difference was not observed between the conductivities measured for pressed powders and for single crystals of TCSe, which is indicative of a weak anisotropy of the crystals resistance.…”

Section: Introductionmentioning

confidence: 99%

“…It is then formed into a pellet, and annealed at 250 o C for 7 days, followed by slow cooling. 7 Moreover, as far as the authors know, the synthesis of TCSe film by non-vacuum or thermic methodology is non-existent. In addition to this, TCSe is poorly studied.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Lucas¹,

Mascaro²

2018

J. Braz. Chem. Soc.

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In spite of selenide semiconductors having a wide application area, TlCu 2 Se 2 (TCSe) is poorly studied and its synthesis by non-vacuum or thermic methodology in film form is non-existent. Generally, the main problems of applying these TCSe compounds are related to complicated single phase growth, and the great time consuming and non-scalable fabrication method. In this work, the facile, fast, scalable and new electrochemical deposition of this material was proposed as a workaround for these main problems and obtaining single phase thin film. Thus, the electrodeposited Tl x Cu 3 -x Se 2 films were characterized by scanning electron microscopy, X-ray diffraction (with Rietveld refinement) and energy dispersive X-ray spectroscopy. They showed interesting variation of composition (x =1.1, 1.2, and 1.25) and morphology as function of the electrodeposition potential, electrolytic bath temperature and thermal treatment.

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Electrical properties of low-dimensional chalcogenides TlCu2−X2 (X = Se, Te) and (Tl1−Ba )Cu2Se2

Cited by 12 publications

References 26 publications

Anomalous magneto-elastic and charge doping effects in thallium-doped BaFe2As2

Anomalous magneto-elastic and charge doping effects in thallium-doped BaFe2As2

Quadratic temperature dependence up to 50 K of the resistivity of metallic MoTe2

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

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