Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF)

Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)

“…The general features of PVDF and PVDF/TrFE are described thoroughly in our paper and in other papers. [8][9][10][11] PVDF and PVDF/TrFE have attracted much attention and their applications have been thoroughly studied, such as in nonvolatile polymer ferroelectric random access memory (FRAM) and ferroelectric devices. Naber et al used PVDF/TrFE solutions to fabricate a nonvolatile organic ferroelectric field effect transistor.…”

“…6,7) To solve these problems, we applied poly(vinylidene fluoride) (PVDF) to the MFS structure as a ferroelectric layer making the best use of the advantages of the MFS structure (high density, simple circuits, and nondestructive readout) 1) and PVDF (low cost, low thermal budget, and the advantages of organic materials). 8,9) PVDF and its copolymer PVDF/trifluoroethylene (TrFE) are well-known ferroelectric polymers. The general features of PVDF and PVDF/TrFE are described thoroughly in our paper and in other papers.…”

“…13) Concerning PVDF films, we have reported the capacitance-voltage (C-V) and current density-voltage (J-V) properties of the MFS diodes formed by spin-coating on Si substrates. 8,9) Furthermore, the fabrication and electrical properties of an organic ferroelectric field effect transistor with spin-coated PVDF film on a gold (Au) bottom gate were reported by Kang et al 14) To our best knowledge, however, the fabrication of MFS field effect transistor (MFSFET) with PVDF films deposited on silicon substrate has never been reported.…”