2015
DOI: 10.2109/jcersj2.123.298
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Electrical properties of Mg<sub>2</sub>Si thin films on flexible polyimide substrates fabricated by radio-frequency magnetron sputtering

Abstract: Mg 2 Si thin films were successfully fabricated on 125-¯m-thick flexible polyimide substrates by radio-frequency (RF) magnetron sputtering deposition using a sintered polycrystalline Mg 2 Si target. The crystalline orientation of the films was influenced by the substrate temperature (Ts). The produced films exhibit n-type carriers. The electron concentration and mobility of nondoped Mg 2 Si films at Ts = RT were 1.9 © 10 16 cm ¹3 and 1.2 cm 2 /(V s), respectively. The Seebeck coefficient was ¹748¯V/K at 336 K,… Show more

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Cited by 19 publications
(2 citation statements)
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“…Recent studies show that some thin films exhibit thermoelectric performances that are considerably greater than those obtained in bulk materials [29]. To the best of our knowledge, little work has been published about un-doped Mg 2 Si thin-films for thermoelectric applications [33][34][35][36][37].…”
Section: Introductionmentioning
confidence: 99%
“…Recent studies show that some thin films exhibit thermoelectric performances that are considerably greater than those obtained in bulk materials [29]. To the best of our knowledge, little work has been published about un-doped Mg 2 Si thin-films for thermoelectric applications [33][34][35][36][37].…”
Section: Introductionmentioning
confidence: 99%
“…The deposition of Mg-Si films is fabricated by ion beam sputtering [9], Mg2Si thin films are grown on Si(111) by the solid-phase annealing method [10,11]. The thin films are prepared by the radio-frequency magnetron sputtering, and measured the Seebeck coefficient [12]. The thin film is also grown by an industrial rapid thermal annealing [13].…”
Section: Introductionmentioning
confidence: 99%