Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusion

New approach for modeling effect of phosphorous diffusion on minority carrier lifetime in multicrystalline silicon wafers

“…These impurities may exist in different states, for example, interstitially dissolved, as metal-silicide precipitates, or as larger micron-sized particles [11]. Energy distribution of trapping states induced by these defects at grain boundaries has a Gaussian distribution [13,14].…”

Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO2/graded index TiO2 anti-reflective coating

“…Using ion implantation, excimer laser annealing, and thermal diffusion of dopants into the Si wafer forming a p-n junction are expensive approaches [2,[6][7][8][9][10][11]. Typically, thermal diffusion is produced by heat treatment in a conventional furnace at temperatures above 900 • C for durations ranging from minutes to hours.…”

Anomalous B diffusion profiles in nanocrystalline Si

“…The usual B diffusion model, which takes into account the variation of the B lattice diffusion coefficient with B concentration, fails to explain the profiles measured in nc-Si. In contrast, B diffusion profiles can be well fitted using a model that takes into account moving grain boundaries with a B-concentration-dependent migration rate.Polycrystalline Si (poly-Si) and in particular nanocrystalline Si (nc-Si) thin films are of great interest for the fabrication of devices such as Si-based solar cells and optoelectronic devices [1][2][3][4]. Usually, device properties depend on the properties of p/n junctions created in the semiconductor (homogeneity of dopant distribution, doping level, junction abruptness and depth, etc.).…”

“…Usually, device properties depend on the properties of p/n junctions created in the semiconductor (homogeneity of dopant distribution, doping level, junction abruptness and depth, etc.). Among the different processes allowing for poly-Si and nc-Si doping for junction production, processes based on dopant diffusion have the benefit of providing dopant activation during diffusion annealing without cluster formation at low cost [3]. This is the reason why this type of process is currently widely used in solar cell production.…”

“…Polycrystalline Si (poly-Si) and in particular nanocrystalline Si (nc-Si) thin films are of great interest for the fabrication of devices such as Si-based solar cells and optoelectronic devices [1][2][3][4]. Usually, device properties depend on the properties of p/n junctions created in the semiconductor (homogeneity of dopant distribution, doping level, junction abruptness and depth, etc.).…”