Electrical Properties of Organic Semiconductor Orange Nitrogen Dye Thin Films Deposited from Solution at High Gravity

Abstract

In this study the electrical properties of organic semiconductor orange nitrogen dye (OND) have been examined. Thin film samples were deposited from OND solution in water on a nickel substrate (it was the first electrode) at room temperature at different gravity conditions including, 1 g (reference samples), 123 g, 277 g and 1107 g by a centrifugal machine. As a second electrode of the samples a gallium drop was used. The voltage-current characteristics of the samples were measured at temperature interval of 30°C –- 60°C. It was found that all voltage-current characteristics were asymmetrical with slightly rectification behavior. The resistances of the samples decrease monotonously with temperature but with acceleration they show minimum around of 123 g. As a rule the forward bias resistance ("+"” voltage was applied to gallium) were less than reverse bias ones ("“+"” voltage was applied to nickel). The electric behavior of the samples analyzed by the conception of space-charge limited currents (SCLC) at the presence of two different kinds of metallic electrodes (Ni and Ga) in the samples.

Design of Dopant and Lead-Free Novel Perovskite Solar Cell for 16.85% Efficiency

“…On the other hand, the solar cell is inherently a diode in nature and its photovoltaic response also depends on diode parameters such as the diode ideality factor, barrier-height, threshold-voltage, series resistance, shunt resistance, reverse saturation current, etc. and these parameters become further complex for the space-charge limited behavior of polymer diode [ 30 , 31 , 32 , 33 , 34 ]. Our simulation result shows that the thicker PCBM improves the device performance, which can be justified due to the better diode properties as it is also reported by many other researchers for the PCBM layer [ 35 , 36 ].…”

The Photo-Electrical Behavior of n-Si and p-Si/Orange Dye/ Conductive Glass Cells

“…Here, we assume that the V se value may be large and approximately comparable with Si band gap (1.1 eV). For the case of p-Si semiconductor-electrolyte, the V se may be negligible because the orange dye is also a p-type organic semiconductor [20,21]. The excitation energy levels in OD solution are the larger ones of the energy gap of the Si.…”

“…We reported organic-on-inorganic Ag/n-GaAs/p-CuPc/Ag photoelectric sensor that was sensitive in UV-visible-IR spectral range (200-1000 nm) [19]. The present paper is one of a series on the characterization of OD and its use as an organic semiconductor which have to date concerned with the investigations of electrical properties of the OD films deposited from aqueous solution at high gravity conditions [20] and a two-layer structure, poly-N-epoxipropylcarbazole/OD heterojunction, that has shown a rectification behavior [21]. This paper presents the results of investigation of photo-electric properties of n-Si/orange dye/conductive glass and p-Si/orange dye/conductive glass photoelectrochemical cells.…”

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

“…In the trapped space charge limited current model, it is generally accepted that both the positional and energetic traps have the capability to capture free charge carriers, which are distributed throughout the polymer layer and degrade the free carrier mobility (high resistance, OFF state), particularly at a lower operating voltage. In a higher applied electric field, many free carriers overcome the trap barrier potential to form a space charge, increasing the mobility and hence the conductivity (ON state) of the polymer thin film [ 15 , 19 , 20 , 21 , 22 , 23 ]. Such resistive ON and OFF behavior can be observed as hysteresis due to the film’s current–voltage characteristics.…”