Electrical properties of polyacetylene/polysiloxane interface

Ebisawa, Fumihiro; Kurokawa, Takayuki; Nara, Saori

doi:10.1063/1.332488

Cited by 281 publications

(116 citation statements)

References 22 publications

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“…Organic FETs were first reported in the 1970s 108,109 and, since then, have attracted significant interest for applications in large area electronics, radio-frequency identification (RFID) tags, flexible active matrix displays, and so forth. 9,110-112 Organic…”

Section: Field-effect Transistorsmentioning

confidence: 99%

Techniques for characterization of charge carrier mobility in organic semiconductors

Kokil

Yang

Kumar

2012

J Polym Sci B Polym Phys

152

128

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The charge transport characteristics of organic semiconductors are one of the key attributes that impacts the performance of organic electronic and optoelectronic devices in which they are utilized. For improved performance in organic photovoltaic cells, light-emitting diodes, and field-effect transistors (FETs), efficient transport of the charge carriers within the organic semiconductor is especially critical. Characterization of charge transport in these organic semiconductors is important both from scientific and technological perspectives. In this review, we shall mainly discuss the techniques for measuring the charge carrier mobility and not the theoretical underpinnings of the mechanism of charge transport. Mobility measurements in organic semiconductors and particularly in conjugated polymers, using space-charge-limited current, time of flight, carrier extraction by linearly increasing voltage, double injection, FETs, and impedance spectroscopy are discussed. The relative merits, as well as limitations for each of these techniques are reviewed.

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Section: Field-effect Transistorsmentioning

confidence: 99%

Techniques for characterization of charge carrier mobility in organic semiconductors

Kokil

Yang

Kumar

2012

J Polym Sci B Polym Phys

152

128

View full text Add to dashboard Cite

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“…[7][8][9][10][11][12] For example, reorientation of individual molecules on a surface can generate bistable conductance switching [7][8][9][10][11][12] that is of potential value in molecular electronic devices. [13][14][15] To realize these technologies, it is essential to better understand the local structural, electronic, and optical properties at the atomic scale, in addition to the molecular dynamics.…”

Section: Introductionmentioning

confidence: 99%

Surface structure of ultrathin copolymer films of ferroelectric vinylidene fluoride (70%) with trifluoroethylene (30%) on graphite

Cai

et al. 2004

Phys. Rev. B

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Surface structure of ultrathin copolymer films of ferroelectric vinylidene fluoride (70%) with trifluoroethylene (30%) on graphite" (2004 The structure and local structural distortions, through the polarization manipulation, of crystalline films of ferroelectric vinylidene fluoride (70%) with trifluoroethylene (30%) [P(VDF-TrFE)] copolymer on graphite were studied by scanning tunneling microscopy (STM). A quasispiral twist in C u C bonds with rotations about the polymer chain axis was observed by high-resolution STM, indicating a surface relaxation of the strained copolymer films. Such a relaxation behavior appears to be linked to the observed local dipole rotations accompanied by the reversal of the local polarization with biasing the STM tip. A structure model is proposed based upon the observations.

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“…According to Ref. 2, the first polymer TFT with a gate-controlled drain-source current 3 was fabricated in 1983 using polyacetylene (CH) x as the semiconducting material in S/D top contact configuration. As shown in Figure 2, the gate dependence of the drain current I D was small, as compared to the conductance between drain and source electrodes.…”

Section: 2mentioning

confidence: 99%

Noise and charge transport in polymer thin film structures

Marinov

Deen

et al. 2003

SPIE Proceedings

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The low frequency noise (LFN) properties of the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET's (PFET's) channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.

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Electrical properties of polyacetylene/polysiloxane interface

Cited by 281 publications

References 22 publications

Techniques for characterization of charge carrier mobility in organic semiconductors

Techniques for characterization of charge carrier mobility in organic semiconductors

Surface structure of ultrathin copolymer films of ferroelectric vinylidene fluoride (70%) with trifluoroethylene (30%) on graphite

Noise and charge transport in polymer thin film structures

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