Polyacetylene/polysiloxane interface states have been investigated using metal-insulator-semiconductor (MIS) diodes. The 1-mm2 MIS diodes (Al/polysiloxane/polyacetylene) have been fabricated by use of a conventional photolithographic technique. The I-V and C-V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties. The electrical conduction mechanism in this interface was found to be a Schottky-Richardson mechanism. Using the C-V measurements to determine the interface states density distribution, it was found that the distribution had a U shape in the gap and its minimum value was 6×1013 eV−1 cm−2. An attempt was made to fabricate an insulating gate field-effect transistor which worked as a depletion-type transistor with a very low transconductance, gm =13 nΩ−1.

Record-low propagation losses of 154dB/cm for substrate-type W1 photonic crystal waveguides by means of hole shape engineering Appl. Phys. Lett. 101, 131108 (2012) Electro-optic polymer/TiO2 multilayer slot waveguide modulators Appl. Phys. Lett. 101, 123509 (2012) Efficient broadband energy transfer via momentum matching at hybrid junctions of guided-waves Appl. Phys. Lett. 101, 123115 (2012) Silicon waveguides and devices for the mid-infrared Appl.

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