Electrical properties of selectively grown homoepitaxial diamond films

Grot, S.A.; Hatfield, C.W.; Gildenblat, G.; Badzian, Andrzej; Badzian, T.

doi:10.1063/1.105172

Cited by 55 publications

(8 citation statements)

References 13 publications

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“…However, diborane is highly toxic and for this reason several less toxic and more easily handled sources in solid or liquid form have been investigated. Solid sources used for boron doping include boron powder (Grot et al 1991) and boron trioxide (B 2 O 3 ) (Zhang et al 1993). Boric acid (H 3 BO 3 ) (Glesener et al 1993), cyclic organic borinate ester (Zhang et al 1993) and trimethylborate ((CH 3 ) 3 BO 3 ) (Locher et al 1995a) are liquid sources which have been applied sucessfully.…”

Section: In Situ Dopingmentioning

confidence: 99%

Growth and application of undoped and doped diamond films

Werner¹,

Locher

1998

Rep. Prog. Phys.

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Diamond is a unique material with several outstanding physical and chemical properties. It has the highest thermal conductivity at room temperature and it is transparent from the UV to the far IR. Furthermore it has the highest hardness, the highest Young's modulus and it is chemically inert and radiation hard. These and other properties of diamond are of great interest for various commercial applications. Much progress has been made in the last decade to produce diamond with chemical vapour deposition (CVD) techniques. Today, CVD diamond plates of more than 10 cm in diameter and more than 1 mm in thickness are commercially available whose properties, especially the optical and thermal ones, are comparable to the best single-crystal diamonds.In this overview, the historical development of CVD diamond deposition with the main focus on the most important techniques, hot-filament and microwave assisted CVD, will be resumed. We describe the control of structural and morphological properties during the deposition which is a prerequisite of oriented growth and the doping of diamond which is needed for semiconductor and sensor applications.The second part of this overview will discuss optical, thermal, thermomechanical and electronic properties of single-crystal diamond and CVD diamond. Finally, we give a description of several applications such as IR windows, heatspreaders, temperature sensors, piezoresistive sensors, diodes and transistors.

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Section: In Situ Dopingmentioning

confidence: 99%

Growth and application of undoped and doped diamond films

Werner¹,

Locher

1998

Rep. Prog. Phys.

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“…Diamond films are rarely epitaxial with the substrate except when grown on bulk diamond. However, evidence of heteroepitaxial growth of diamond on substrates with similar cell parameters, e.g., BeO, Si, − Ni, Cu, c -BN, − and β-SiC1, , has been obtained. By use of the experiences of heteroepitaxial growth of diamond on different substrates, complex composites could be produced that may become more efficient than conventional tools for various industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Diamond Nucleation on Hexagonal Boron Nitride: A Theoretical Investigation of the Influence of Nearest Substituents

1997

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The effect of electronegative substituents on the diamond nucleation on hexagonal boron nitride (h-BN) was investigated theoretically by using the DFT method. Fluorine and hydroxyl were used as substituents on zigzag edge atoms of the basal plane. Outgrowths corresponding to diamond nuclei were calculated to be energetically more stable than the corresponding growth of graphite nuclei for both types of substituents. A comparison between the nucleation of diamond on H-terminated and substituted h-BN edges showed only small energy differences. The effect of the larger electronegativities and radii of F and OH on the stabilization energy of the diamond nucleation was found to be minimized by the lengthening of the substituent-ring distance and by distortion of the geometry.

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“…surface transfer doping [1][2][3] have been developed. ptype doping with boron [4] aided with surface transfer doping has helped achieve high performance devices with extremely low activation energy [5]. Still, to date, problems with n-type doping of diamond [6,7] have hindered its development as a ubiquitous device material.…”

Section: Introductionmentioning

confidence: 99%

Revisiting Effects of Nitrogen Incorporation and Graphitization on Conductivity of Ultra-nano-crystalline Diamond Films

Nikhar¹,

Rechenberg²,

Becker³

et al. 2019

Preprint

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Detailed structural and electrical properties of ultra-nano-crystalline diamond (UNCD) films grown in H2/CH4/N2 plasma were systematically studied as a function of deposition temperature (T d ) and nitrogen content (% N2) to thoroughly evaluate their effects on conductivity. T d was scanned from 1000 to 1300 K for N2 fixed at 0, 5, 10 and 20 %. It was found that even the films grown in the synthetic gas mixture with no nitrogen could be made as conductive as 1-10 −2 Ω cm with overall resistivity of all the films tuned over 4 orders of magnitude through varying growth parameters. On a set of 27 samples, Raman spectroscopy and scanning electron microscopy show a progressive and highly reproducible film material phase transformation, from ultra-nano-crystalline diamond to nano-crystalline graphite as deposition temperature increases. The rate of this transformation is heavily dependent on N2 content. Addition of nitrogen greatly increases the amount of sp 2 bonded carbon in the films thus enhancing the physical connectivity in the GB network that have high electronic density of states. However, addition of nitrogen greatly slows down crystallization of sp 2 phase in the GBs. Therefore, proper balance between GB connectivity and crystallinity is the key in conductivity engineering of (N)UNCD.

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Electrical properties of selectively grown homoepitaxial diamond films

Cited by 55 publications

References 13 publications

Growth and application of undoped and doped diamond films

Growth and application of undoped and doped diamond films

Diamond Nucleation on Hexagonal Boron Nitride: A Theoretical Investigation of the Influence of Nearest Substituents

Revisiting Effects of Nitrogen Incorporation and Graphitization on Conductivity of Ultra-nano-crystalline Diamond Films

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