Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

“…Some preliminary results in this field have been presented by us recently in Refs. [18,19]. It was shown in Refs.…”

“…[20,21] that irradiation of Si diodes with Li, B, O 2 , Si ions with energies 35-100 MeV allows to achieve a substantial decrease in the reverse recovery time. Further, Poklonski et al [19] have found that implantation of Si diodes with 350 MeV Au ions allows to achieve an acceptable ratio between the reverse recovery time and forward voltage drop.…”

Observation of Conductivity Type Change in Swift Heavy Ion Irradiated Metal/Semiconductor Devices

“…Hydrogen in semiconductor material play major role because of its H + and H -state and influences strongly electrical and optical properties of such materials [3][4][5]. Due to its single vacancy (H+ & H-), hydrogen has ability to passivate the electrically active dangling bonds in crystalline silicon semiconductor [6][7][8][9].…”

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p+n-Diodes

“…Implantation with heavy ions with the fluences of 10 9 -10 12 cm −2 [7,8] also leads to a considerable decrease in reverse resistance recovery time (recovery charge). A possibility to reduce the reverse resistance recovery time by an order of magnitude for the diodes implanted with Au ions with the energy 350 MeV and the fluence 10 8 cm −2 is shown in [9]. In work [10] silicon diodes irradiated with krypton ions with energy of 250 MeV and three fluence values (10 8 ; 5 × 10 8 ; 10 9 cm −2 ) were studied.…”