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Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p + -region (implantation energy 170 MeV, uence Φ from 5 × 10 7 to 10 9 cm −2 ). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative dierential resistance in the currentvoltage characteristics of the irradiated diodes.

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