Modification of electrical properties of CdSxSe1−x films by hard irradiation and nanostructuring

Optical and photoelectrical properties of CdSx Se1–x films produced by screen‐printing technology

“…At the same time, the photoconductance maximum positions are shifted to long wavelength region as compared to PL maximum. Comparison of the photoconductance spectra for the screen-printed samples and vacuum deposited samples studied in [16] shows that the photosensitivity of screen-printed films is shifted to long wavelength spectral region. The observed shift of photoconductance spectra to the long wavelength region can be explained [20] by (i) high surface recombination due to the highly-developed sample surface (that suppress the short wavelength photoconductance) and (ii) imperfection of the studied films contributing to the sub-band gap photoconductance (probably due to the presence of the bandtail states).…”

“…The photoconductance spectra were normalized to the light source spectrum. Figure 2 shows the scanning electron micrographs of CdS x Se 1-x films which have been prepared using the screen-printing-sintering and vacuum evaporation procedures [16]. It is seen that (i) the films produced by the print-screen-sintering technique were thicker by an order of magnitude compared to the vacuum evaporated ones and (ii) had a strongly developed surface.…”

Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

“…The irradiation creates a wide variety of defect states in the material system by ionization or excitation processes which form new electronic configuration coordinates that cause a change in electrical response of the material and consequently its physical properties [8,9]. These changes are strongly dependent on the exposure dose.…”

“…Thin films active devices now occupy a prominent place in research and solid-state technology. The optimization of CdS films characteristics has created a need for a better understanding of its electrical properties, which have been investigated intensively, while few studies on gamma irradiation have been available in the literature [8,14,15]. The novelty of this study is to modify the electrical properties of CdS thin films by exposing them to specific doses of gamma irradiation, which makes change in dc electrical conductivity, carrier concentration, Hall mobility, Hall coefficient, and flat band potential.…”

Bath atomic composition and deposition time influence on the properties of nanostructured CdS0.5Se0.5 thin films synthesized by CBD

“…The interest is focused on the modulation of the properties by modifying the composition x [4e8]. Ternary semiconductor films like CdSSe, CdZnS and ZnSSe, can be prepared by several techniques such as sputtering [1], screen printing [3], spray pyrolysis [4], laser ablation [9,10], and chemical bath deposition (CBD) [11,12]. CBD allows the control of the films properties by modifying the experimental parameters such as type and concentration of the reactants, temperature, pH and deposition time.…”