Optical-absorption spectrum of silicon containing internal elastic stresses

We present a study of the influence of high strain on the bandgap and the refractive index of silicon. The results of photoluminescence show that with the strain applied, the silicon bandgap can be adjusted to 0.84 eV and the refractive index of silicon increases significantly. 1.4% change of refractive index of silicon was observed. The strain-induced bandgap shrinkage and absorption coefficient change of silicon are considered as the main cause of the significant refractive index change. The present work indicates that the application of strain is promising to control the refractive index of silicon in devices so that applications such as compensation of thermal effect in optical devices can be achieved.

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Optical-absorption spectrum of silicon containing internal elastic stresses

Cited by 3 publications

References 6 publications

Evaluations of the intrinsic stress value in silicon wafers from photovoltage measurements

Evaluations of the intrinsic stress value in silicon wafers from photovoltage measurements

Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si

Strain induced bandgap and refractive index variation of silicon

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