2013
DOI: 10.1364/oe.21.007162
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Strain induced bandgap and refractive index variation of silicon

Abstract: We present a study of the influence of high strain on the bandgap and the refractive index of silicon. The results of photoluminescence show that with the strain applied, the silicon bandgap can be adjusted to 0.84 eV and the refractive index of silicon increases significantly. 1.4% change of refractive index of silicon was observed. The strain-induced bandgap shrinkage and absorption coefficient change of silicon are considered as the main cause of the significant refractive index change. The present work ind… Show more

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Cited by 42 publications
(32 citation statements)
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“…Effective area = A eff + a eff (ɛ), (14) where, A eff is the large constant and a eff (ɛ) is the strain dependent part of the effective area of the optical fiber. From now on, all of the exhibited figures are for the variable part of the Equation (13) and Equation (14).…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Effective area = A eff + a eff (ɛ), (14) where, A eff is the large constant and a eff (ɛ) is the strain dependent part of the effective area of the optical fiber. From now on, all of the exhibited figures are for the variable part of the Equation (13) and Equation (14).…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
“…Getting exposed to strain, the bandgap shift of silica causes the change in the absorption coefficients and affects the refractive index of it. Therefore, the strain-induced bandgap change is related to the changes of the refractive index [14].…”
Section: Methodsmentioning
confidence: 99%
“…The variation in the absorption coefficient affects the refractive index of silica. Therefore, the strain-induced bandgap change is related to the changes of the refractive index [4]. Generally, the change in refractive index is deduced to be [5]…”
Section: Mathematical Formulation and Design Proceduresmentioning
confidence: 99%
“…The second challenge is the undesirable induced strain due to holders and staples in the small radius installations. The transmission characteristics of the designed bend insensitive optical fiber must be resistant to the refractive index profile variations made by the external applied strain [4,5]. The next challenge is compatibility with the standard singlemode fibers (SMFs) installed in the telecommunication industry.…”
Section: Introductionmentioning
confidence: 99%
“…The stress tuning concept was applied in the three-dimensional microelectro-mechanical systems (MEMS)-based beam structures and the bandgap shifts from applying stress were detected by the photoluminescence peak shifts [14][15][16][17][18]. To apply the concept to expand the range of the operation wavelength in terms of external stress, Ge waveguides are designed to be implemented on a Si waveguide on the Si beam.…”
Section: Introductionmentioning
confidence: 99%