2013
DOI: 10.1134/s1063783413060292
|View full text |Cite
|
Sign up to set email alerts
|

Getter formation in silicon by implantation of antimony ions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2015
2015
2020
2020

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 12 publications
0
1
0
Order By: Relevance
“…Next, the term pseudogap was narrowed to 'fluctuating band gap', the gap formed by fluctuating charge density wave (CDW) at a Peierls transition [3] in quasi-onedimensional (1D) metals [4][5][6][7], as shown in Fig. 1.…”
mentioning
confidence: 99%
“…Next, the term pseudogap was narrowed to 'fluctuating band gap', the gap formed by fluctuating charge density wave (CDW) at a Peierls transition [3] in quasi-onedimensional (1D) metals [4][5][6][7], as shown in Fig. 1.…”
mentioning
confidence: 99%