Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

“…Many researchers have explored various metal/insulator schemes for the fabrication of Schottky contacts on GaN [7][8][9][10][11][12][13]. Tu et al [7] fabricated GaN metal-oxide-semiconductor structure using the high-dielectric-constant Ta 2 O 5 and possible low threshold voltages were demonstrated with high-frequency C-V measurements.…”

“…Tu et al [7] fabricated GaN metal-oxide-semiconductor structure using the high-dielectric-constant Ta 2 O 5 and possible low threshold voltages were demonstrated with high-frequency C-V measurements. Chang et al [8] prepared silicon nitride (SiN)/GaN MIS diodes by electron cyclotron resonance chemical vapor deposition (ECR-CVD). They showed that the interface densities were less than 4 × 10 11 cm −2 eV −1 around the mid-gap and the minimum value was 5 × 10 10 cm −2 eV −1 at 0.6 eV below conduction band edge.…”

Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

“…This is suggested because the plasma discharge becomes unstable with the increase of the N 2 flow rate as a result of the higher dissociation energy of N 2 molecule than that of H 2 molecule. This deposition rate is generally higher than those obtained in low pressure PECVD [15,16]. [13] and [14].…”

Theoretical investigation on nanoparticle concentrations in optoelectrofluidic chip based on diffusion, convection, and migration

“…In the PECVD fabrication of continuous deposit, a thick 20 nm SiN layer is used to protect photoconductive thin film because of the hydrolysis reaction. The SiN material has higher resistance (10 17 Ω · m) and its permittivity is approximately 6e 0 [18][19] . The hydrogenated amorphous silicon (a-Si:H) conductivity under light illumination or not is 10 À 4 S/m or 10 À 6 S/m, respectively.…”