Electrical properties of SnSe2 thin films

Hady, D. Abdel; Soliman, H. S.; El-Shazly, A. A.; Mahmoud, Manal S E

doi:10.1016/s0042-207x(97)00033-x

Cited by 21 publications

(6 citation statements)

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“…The formation of SnSe thin films by vacuum evaporation [10] or laser ablation of SnSe [11], electrodeposition [12], chemical bath deposition [13] and brush plating [14] is known. In the case of SnSe 2 thin films the formation of polycrystalline thin films by vacuum evaporation of SnSe 2 powder and subsequent annealing has been reported [15]. Here we show that, depending on the thickness of the tin layer and the Se thin film and conditions of heating, a thin film of SnSe 2 , or a composite film of SnSe 2 /SnSe components may be formed.…”

Section: Introductionsupporting

confidence: 62%

“…Standard patterns of hexagonal SnSe 2 (PDF 23-0602) and orthorhombic SnSe (PDF 48-1224), relevant to this analysis, are also shown in the figure . From the XRD pattern, it may be concluded that sample A is hexagonal SnSe 2 , having a preferential orientation of (101) planes (2θ = 30.70 • ), parallel to the substrate plane. In vacuum evaporated SnSe 2 thin films, 70 nm thick, annealed at 227 • C in vacuum, (001) planes were reported to have been preferentially oriented parallel to the substrate surface [15]. The average grain size of the crystallites, calculated using the Debye-Scherrer formula from the (101) peak was 14 nm in the present case.…”

Section: Tin Selenide Thin Filmsmentioning

confidence: 55%

“…Hexagonal SnSe 2 (a = 3.81 Å, c = 6.14 Å) has a layer-structure in which Sn layers are sandwiched between two Se layers facing each other. Each Sn atom has six nearest neighbours of Se atoms in an octahedral coordination [15,21]. The strong anisotropy of physical properties of the compound, due to the layered structure, makes it suitable for applications in thermo-electric generators, detectors and emitters in the infrared spectral region and memory devices, as listed in [22].…”

Section: Tin Selenide Thin Filmsmentioning

confidence: 99%

“…For 2 eV photons, the values of α are: 8, 10 and 12 (×10 4 cm −1 ) for methods (iii), (ii) and (i), respectively. In the case of SnSe 2 , both allowed and forbidden optical transitions across an indirect gap are reported [15,24] whereas for SnSe allowed and forbidden transition over an indirect gap as well as allowed transitions across a direct optical gap have been reported [14,24,10]. In the present work, we set the criteria that in the analysis of optical absorption data, in plots of (αhν) n versus hν, a straight line portion extending for more than a 0.5 eV interval must be observed before assigning a particular type of transition or type of optical band gap (E g ).…”

Section: Tin Selenide Thin Filmsmentioning

confidence: 99%

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Semiconducting tin selenide thin films prepared by heating Se–Sn layers

Bindu¹,

Nair²

2004

Semicond. Sci. Technol.

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Deposition of Se thin films of 80-350 nm in thickness from a chemical bath at a deposition yield of more than 95% is reported. These films are utilized to prepare SnSe and SnSe 2 thin films either by heating a vacuum deposited Sn thin film in close contact with the Se thin film at 200 • C in a nitrogen atmosphere for 1 h or by heating a Se-Sn stack in air at 400 • C for about 5 min. By controlling individual film thicknesses and the conditions of heating, SnSe 2 or composite films of SnSe 2 and SnSe are formed. An optical band gap of 1-1.27 eV, electrical conductivity of 0.01-0.2 −1 cm −1 and the photoconductivity of these materials fulfil the basic requirements for their integration into photovoltaic structures.

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Section: Introductionsupporting

confidence: 62%

Section: Tin Selenide Thin Filmsmentioning

confidence: 55%

Section: Tin Selenide Thin Filmsmentioning

confidence: 99%

Section: Tin Selenide Thin Filmsmentioning

confidence: 99%

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Semiconducting tin selenide thin films prepared by heating Se–Sn layers

Bindu¹,

Nair²

2004

Semicond. Sci. Technol.

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“…SnSe 2 thin films have been prepared by spin coating 20,21 , spray pyrolysis 14,22,23 , chemical vapour deposition(CVD) 15,18 , molecular beam epitaxy 10 , thermal evaporation of Sn and Se elements 24 , and sputtering 25 . Here, we deposited Sn films of various thicknesses on soda lime glass (SLG) substrate and annealed the films in selenium atmosphere for 1 h at 450 °C to obtain hexagonal SnSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

Mukhokosi

Krupanidhi

2017

Sci Rep

117

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We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV similar to that of bulk for the 1200 nm thick film. The variation of the band gap is consistent with the the theoretically predicted layer-dependent band gap of SnSe2. Interestingly, the 400–1200 nm thick films were sensitiveto 1064 nm laser iradiation and the sensitivity increases almost exponentiallly with thickness, while films with 50–140 nm thick are insensitive which is due to the fact that the band gap of thinner films is greater than the energy corresponding to 1064 nm. Over all, our results establish the possibility of engineering the band gap of SnSe2 layered structures by simply controlling the thickness of the film to absorb a wide range of electromagnetic radiation from infra-red to visible range.

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From Metals to Semiconductors: Advancing MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te) Compounds with Strain Engineering—A Computational Perspective

Aldaoseri,

Nourbakhsh,

Vashaee

2024

Adv Eng Mater

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In this computational study, density functional theory (DFT) is employed to analyze the structural, electronic, elastic, and topological properties of ternary compounds MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te). The effects of spin–orbit interaction and pressure‐induced strain are investigated to understand their influence on the stability, mechanical properties, and electronic behavior, paving the way for potential technological applications. The findings confirm that these compounds are inherently stable in nonmagnetic phases, with spin–orbit interaction critically influencing their energy–volume landscapes. The calculated lattice parameters, ratios of lattice constants, and bulk moduli closely align with existing data, confirming the reliability of our approach. Mechanical assessments reveal distinct behaviors: IrSe2 exhibits the highest stiffness due to pronounced covalent bonding, contrasting with SnTe2's elastic anisotropy and SnSeTe's nearly isotropic properties. Electronically, most compounds show metallic characteristics, except SnSe2, which behaves as a semiconductor with an indirect, pressure‐sensitive energy bandgap. Topological analysis under varying hydrostatic pressures indicates band inversions in TiSe2, IrSe2, and SnSeTe, suggesting topological phase transitions absent in other compounds. This study enriches our understanding of these materials and refines the application of DFT in material design.

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Electrical properties of SnSe2 thin films

Cited by 21 publications

References 0 publications

Semiconducting tin selenide thin films prepared by heating Se–Sn layers

Semiconducting tin selenide thin films prepared by heating Se–Sn layers

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

From Metals to Semiconductors: Advancing MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te) Compounds with Strain Engineering—A Computational Perspective

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