1969
DOI: 10.1103/physrev.187.828
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Electrical Properties of Some Titanium Oxides

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1976
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Cited by 296 publications
(230 citation statements)
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“…3). According to Rao et al [61] and Bartholomew and Frankl [33], this system is a semiconductor for temperatures below ≈400 K, therefore the description of the room-temperature phase γ -Ti 3 O 5 as a metal by HSE is by no means correct.…”
Section: B Electronic and Magnetic Propertiesmentioning
confidence: 99%
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“…3). According to Rao et al [61] and Bartholomew and Frankl [33], this system is a semiconductor for temperatures below ≈400 K, therefore the description of the room-temperature phase γ -Ti 3 O 5 as a metal by HSE is by no means correct.…”
Section: B Electronic and Magnetic Propertiesmentioning
confidence: 99%
“…Electronic structure calculations have been used to understand mainly the Ti 2 O 3 [32] and Ti 4 O 7 [29][30][31]. Experimental reports [33][34][35] of some of these structures are not conclusive about the origin of the increase of electrical conductivity with respect to the rutile phase, nor about the switching mechanism. The question that arises is how the presence of extended-defect structures is related to the increase of electrical conductivity in this case.…”
Section: Introductionmentioning
confidence: 99%
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“…Since it contains at the same time Ti 4 +(3d °) and Ti3+(3d 1) cations in equal proportions, it has remarkable electrical and magnetic properties (Lakkis, Schlenker, Chakraverty, Buder & Marezio, 1976). Single crystals can be prepared either by flux or vapor transport method (Bartholomew & Frankl, 1969;Mercier & Lakkis, 1973). However, all the larger crystals are twinned.…”
Section: Introductionmentioning
confidence: 99%
“…Metal-insulator-transitions have been observed in some Ti suboxides with a transition temperature of around 200 C (Refs. [43][44][45]. This could be one of the possible causes of the nonlinearity observed, which are presently under investigation.…”
mentioning
confidence: 99%