Electrical properties of TaxNy films by implementing OES in the sputtering system

Lu, Yang‐Ming; Weng, Ruey-Jer; Hwang, Weng-Sing; Yang, Yu

doi:10.1016/s0254-0584(01)00452-7

Cited by 10 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This assumption is confirmed as the solid-solution Ta-N crystallises predominantly in the bcc-modification (Frisk 1998) and also underlayers of TaN faciliate the generation of a-Ta (Gladczuk et al 2005). Basically, the general increase in resistivity with enhanced nitrogen content in the sputter gas is in good agreement with data published for reactively sputter deposited (Sun et al 1993;Ayerdi et al 1994;Lu et al 2001a;Chen et al 1999Chen et al , 2001Lu et al 2001b;Riekkinen, et al 2002;Chang et al 2002;Chung 2007) and chemical vapour deposited TaN x films (Hieber 1974). Between 25 and 50% N 2 in the sputter gas, the values for the resistivity are almost constant.…”

Section: Resistivity Measurementssupporting

confidence: 85%

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

et al. 2010

View full text Add to dashboard Cite

The properties of tantalum nitride (TaN x ) thin films on silicon and low temperature co-fired ceramics based substrates were investigated with respect to their potential use for sensor elements operated under harsh environmental conditions. For deposition reactive direct current magnetron sputtering was applied at constant back pressure (=0.9 Pa) and plasma power (=1,000 W). In all experiments, the substrates were nominally unheated. The films were investigated electrically by four point probing. For morphological and chemical analyses, a large variety of techniques such as focussed ion beam, scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and glow discharge optical emission spectroscopy were used. Only by combining all these techniques for analysing TaN x films synthesised with varying nitrogen content in the deposition chamber can a proper evaluation of the microstructure and the chemical composition be done. Both the microstructure and the chemical composition are influenced strongly with a resulting effect on the electrical film properties.

show abstract

Section: Resistivity Measurementssupporting

confidence: 85%

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

et al. 2010

View full text Add to dashboard Cite

show abstract

“…It has been found that the resistance value of the resistor made from tantalum nitride changes only 0.05% after 10 years of usage. [3] TaN thin films can be produced by chemical vapor deposition techniques and physical vapor deposition techniques. Among these techniques, reactive magnetic sputtering is frequently used, because it is compatible with the conventional metallization schemes used in integrated circuit technology [4].…”

Section: Introductionmentioning

confidence: 99%

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

Wang¹,

Cao²,

Song³

2014

AMR

View full text Add to dashboard Cite

show abstract

“…TaN (tantalum nitride) as a promising material are widely studied [1] .Tantalum nitride thin films have many excellent properties, such as smaller TCR, wide resistance range, adaptability to harsh environment. Previous studies shows that the sheet resistance value and the TCR of the tantalum nitride thin film resistors almost do not change for a long time of usage [2] .Tantalum nitride thin films can be deposited by several deposition techniques, such as the chemical vapor deposition techniques and the physical vapor deposition techniques. Among these techniques, reactive magnetic sputtering is frequently used, because it is compatible with the conventional metallization schemes used in integrated circuit technology [3].…”

Section: Introductionmentioning

confidence: 99%

Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering

Wang¹,

Song²,

Cao³

2014

AMR

View full text Add to dashboard Cite

In this paper, TaN thin film were deposited on ceramic substrates by D.C. magnetron sputtering. The surface morphology of two types of TaN thin film resistors were investigated by SEM. The characteristics of the TaN thin film resistor was also studied. The key point was put on the TCR of the TaN thin film resistors. The resistors were trimmed by the autoxidation process and the anodic oxidation process, and the TCR values of about +21ppm/°C and-137.3ppm/°C in average have been achieved respectively.

show abstract

Electrical properties of TaxNy films by implementing OES in the sputtering system

Cited by 10 publications

References 5 publications

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering

Contact Info

Product

Resources

About