Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering

Abstract

In this paper, TaN thin film were deposited on ceramic substrates by D.C. magnetron sputtering. The surface morphology of two types of TaN thin film resistors were investigated by SEM. The characteristics of the TaN thin film resistor was also studied. The key point was put on the TCR of the TaN thin film resistors. The resistors were trimmed by the autoxidation process and the anodic oxidation process, and the TCR values of about +21ppm/°C and-137.3ppm/°C in average have been achieved respectively.

Effect of Nitrogen Flow Ratio on Degradation Behaviors and Failure of Magnetron Sputter Deposited Tantalum Nitride

“…In addition, due to the presence of a large amount of active N atoms in the sputtering atmosphere, as the nitrogen flow rate in the sputtering atmosphere increases, the number of active N atoms in the atmosphere gradually increases. They chemically react with the Ta atoms on the surface of the target and produce TaN compounds, causing the target to become slightly "poisoned" [1,4], and thereby reducing the sputtering rate. atoms in the atmosphere gradually increases.…”

“…atoms in the atmosphere gradually increases. They chemically react with the Ta atoms on the surface of the target and produce TaN compounds, causing the target to become slightly "poisoned" [1,4], and thereby reducing the sputtering rate.…”

“…Therefore, they have excellent stability and reliability. In recent years, tantalum nitride films have received increasing attention in the field of microelectronics, especially in microcircuit-stabilizing resistors, barrier materials, and circuit-etching materials [1][2][3][4].…”