2012
DOI: 10.1016/j.diamond.2012.01.016
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Electrical properties of textured carbon film formed by pulsed laser annealing

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Cited by 12 publications
(18 citation statements)
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“…3, due to the symmetric nature of the shape of the Raman spectra for the film deposited at RT, its spectrum can be well fitted by a single Gaussian line with the peak centered at 1554.6 cm −1 . This behavior indicates that the film is purely amorphous with no sp 2 clusters in the structure [18,28]. However, the Raman spectra of the films deposited at 100, 200, and 300 °C, cannot be fitted by a single G band and an additional Gaussian D band is required to perfect the fit of original spectrum (Fig.…”
Section: Structure and Compositionmentioning
confidence: 93%
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“…3, due to the symmetric nature of the shape of the Raman spectra for the film deposited at RT, its spectrum can be well fitted by a single Gaussian line with the peak centered at 1554.6 cm −1 . This behavior indicates that the film is purely amorphous with no sp 2 clusters in the structure [18,28]. However, the Raman spectra of the films deposited at 100, 200, and 300 °C, cannot be fitted by a single G band and an additional Gaussian D band is required to perfect the fit of original spectrum (Fig.…”
Section: Structure and Compositionmentioning
confidence: 93%
“…Ion beam deposition, Mass-selected ion beam deposition (MSIB), and filtered arc cathode deposition (FCVA) have been used to deposit hydrogen free DLC films [16][17][18][19]. Z. Tang et al [16] have been investigated DLC films deposited using the MSIB method and observed that the DLC films with high optical band gap, low surface roughness and high thermal stability obtained through mass-selected carbon ions species with ion energy of 100 eV.…”
Section: Introductionmentioning
confidence: 98%
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“…The spectra of the C:Co composite film at room temperature show that only one peak and a neighbor peak at around 1350 cm −1 started to emerge with increasing substrate temperature. The microstructure subjected to different growth temperatures is shown in Figure 1(b)-the rightward shift of G peak position is due to the conversion of sp 3 bonding to sp 2 bonding [14,20,21]. Based on the three-stage model [20], the film grown under RT is estimated to be 30% in sp 2 content, and as the growth temperature increases, the sp 2 content in the film rises to more than 80%.…”
Section: Methodsmentioning
confidence: 99%
“…The relationship between the CNTs growth and the intrinsic properties of C:Me composite film, such as the sp 2 /sp 3 ratio, is not well understood yet. Recent work has shown that by in-situ thermal annealing and ex situ laser annealing, sp 2 -rich high electrical conducing nanostructured C film can be synthesized [14][15][16][17], which can then be adopted in future electronic applications. Hence the electrical properties of C:Me composite film can be varied by only changing the sp 2 /sp 3 ratio of the amorphous carbon.…”
Section: Introductionmentioning
confidence: 99%