Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide

Atomic Layer Deposition of Titanium Disulfide Thin Films

“…Though there was some scatter in the data, most apparently due to the morphology issues (see below), the growth rate appeared to be saturated at a level of about 0.15-0.20 Å per cycle with pulse times of 0.2 -1.0 s. The resistivity of the TiS 2 film grown on ZnS using 1.0 s pulse and purge lengths was 900 lX cm, which is quite close to the reported bulk value of 714 lX cm. [25] No chlorine or other impurities were detected by energy dispersive X-ray (EDX) analysis. The growth rate of TiS 2 grown on sodalime glass was 0.26 Å per cycle.…”

Electrical Transport and High‐Performance Photoconductivity in Individual ZrS2 Nanobelts

“…In the high temperature region ( T > 180 K), a slight decrease in current with increasing temperature is ascribed to the strong phonon scattering, which has also been found in a bulk ZrS 2 single crystal. [ 15 ] In the middle temperature region (110 K < T < 180 K), the dc conductance, σ , as a function of inverse temperature (Figure 3 e) can be described in the frame of the small polaron theory. Mott proposed a conduction model of the optical phonon assisted hopping of small polarons between the localized states in transition-metal oxides, which is described by a general formula at the relatively high temperatures: [ 16 ] …”

Polarized X-ray absorption spectroscopy and XPS of TiS3: S K- and Ti L-edge XANES and S and Ti 2p XPS

“…1a), which could have displaced the Ti 3d orbitals out of energy alignment with the empty S 3p antibonding orbitals. It is also noteworthy that TiS 3 is diamagnetic [12], whereas CdI 2 -type TiS 2 displays weak Curie-Weiss paramagnetism [57] and, hence, probably has a finite, albeit low, occupancy of Ti 3d states. The disulfide ion is well known to impose a low-spin 3d electron configuration and diamagnetic character on pyrite (FeS 2 ) [58].…”