Electrical Properties of the n-NiS₂/n-CdTe Isotype Heterojunction Fabricated by Spray Pyrolysis

Abstract

The conditions for the fabrication of n-NiS2/n-CdTe isotype heterojunctions with diode properties by spray pyrolysis of n-NiS2 thin films on n-CdTe crystalline substrates have been studied. The temperature dependence of the current-voltage characteristics is analyzed, and the mechanisms of the current generation at the heterojunction at forward and reverse voltages are determined. Based on the analysis of the capacitance-voltage characteristics, a model of a double Schottky diode for the studied heterojunction is presented, which well describes the observed electrophysical phenomena.

Tuning the electrochemical properties of NiS2 2D-nanoflakes by one-zone sulfurization for supercapacitor applications

“…The conventional fabrication methods of electrodes generally involve several complex steps using multiple expensive, or environmentally hazardous precursors (such as thiourea) and techniques [20][21][22][23][24][25]. Fabrication processes often involve mixing active materials with different additions as conductive materials and binders, which often causes a formation of electrochemically less active interfaces.…”