Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Furuta, Mamoru; Kawaharamura, Toshiyuki; Wang, Depang; Toda, Tatsuya; Hirao, Takashi

doi:10.1109/led.2012.2192902

Cited by 49 publications

(36 citation statements)

References 14 publications

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“…The SiO 2 /Si substrates were employed as the gate insulator/electrode in Hf-InO x TFTs. Generally, the channel film can be deposited by pulsed laser deposition (PLD), 1,36,37 solution-based atmospheric pressure chemical vapor deposition (known as a mist-CVD) 38,39 and magnetron sputtering 40,41 in main deposition method because of its high output and good stability. Among them, the filed mobility of IGZO TFT fabricated by magnetron sputtering is higher than those by mist-CVD and PLD.…”

mentioning

confidence: 99%

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

et al. 2015

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The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

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confidence: 99%

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

et al. 2015

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“…InGaZnO thin film transistors [25], as shown in Fig. 5, where the active and insulating layers were fabricated by the mist CVD, exhibited the fairly good device performance such as on/off ration of >10 8 , fieldeffect mobility of 4.2 cm 2 /Vs, and low leakage current of < 1 pA, compared to conventional devices fabricated by sputtering-deposited films, 3.3 Single crystalline oxide thin films For singlecrystalline oxide semiconductors, layer-by-layer growth of ZnO, which had been difficult by MOCVD, was successfully achieved.…”

Section: Amorphous Oxide Thin Films and Tftsmentioning

confidence: 99%

Ultrasonic‐assisted mist chemical vapor deposition of II‐oxide and related oxide compounds

Fujita

Kaneko

Ikenoue

et al. 2014

Phys. Status Solidi C

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Basic concepts of ultrasonic‐assisted mist chemical vapor deposition (CVD), and its applications to the fabrication of II‐oxide and related oxide films are described. Fairly good thin film properties and device performance, compared to those achieved by conventional vacuum‐based processes, encourage the mist CVD as a simple, inexpensive, energy‐saving and non‐vacuum process, opening new and wide application of oxide materials for novel devices supporting the future environment. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…. 44 The structure and fabrication conditions of the oxide TFT are shown in Figure 4. First, the AlO x insulator and IGZO channel layer were fabricated by mist CVD at 430…”

Section: Practical Evaluation Of Insulation By Alo X Thin Filmsmentioning

confidence: 99%

“…41 With mist CVD, compared to other solution-based technologies, there is great benefit due to the fact that a thin film can be grown continuously after growing another thin film because the precursor solution does not directly attach to the surface of the substrate or target film. [42][43][44] In this paper, properties of AlO x thin films grown by mist CVD are reported, and reasons for degradation in the breakdown field (E BD ) as well as a reaction path for AlO x thin films grown by mist CVD are discussed. An illustration is then provided with an evaluation of a gate leakage current (I G ) in a oxide thin film oxide transistor (TFT), consisting of a gate insulator (AlO x ) and a channel layer (indium gallium zinc oxide: IGZO) grown by mist CVD.…”

Section: Introductionmentioning

confidence: 99%

Growth and electrical properties of AlOx grown by mist chemical vapor deposition

et al. 2013

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Aluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate (Al(acac)3) as a source solute by mist chemical vapor deposition (mist CVD). The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (EBD) over 6 MV/cm and a dielectric constant (κ) over 6. It is suggested that residual OH bonding in the AlOx thin films grown at temperatures below 375°C caused degradation of the breakdown field (EBD). With FC type mist CVD, the reaction proceeded efficiently (Ea = 22–24 kJ/mol) because the solvent, especially H2O, worked as a stronger oxygen source. The AlOx film could be grown at 450°C with a high deposition rate (23 nm/min) and smooth surface (RMS = 1.5 nm). Moreover, the AlOx thin films grown by mist CVD had excellent practicality as insulators because the gate leakage current (IG) of the oxide thin film transistor (TFT) with an IGZO/AlOx stack was suppressed below 1 pA at a gate voltage (VG) of 20 V

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Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Cited by 49 publications

References 14 publications

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Ultrasonic‐assisted mist chemical vapor deposition of II‐oxide and related oxide compounds

Growth and electrical properties of AlOx grown by mist chemical vapor deposition

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